[1]      P. C. Adell, H. J. Barnaby, R. D. Schrimpf, and B. Vermeire, “Band-to-band tunneling (BBT) induced leakage current enhancement in irradiated fully depleted SOI devices,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2174-2180, Dec 2007.

[2]   K. Akarvardar, S. Cristoloveanu, P. Gentil, R. D. Schrimpf, and B. J. Blalock, “Depletion-all-around operation of the SOI four-gate transistor,” Ieee Transactions on Electron Devices, vol. 54, pp. 323-331, Feb 2007.

[3]   K. Akarvardar, R. D. Schrimpf, D. M. Fleetwood, S. Cristoloveanu, P. Gentil, and B. J. Blalock, “Evidence of radiation-induced dopant neutralization in partially-depleted SOINMOSFETs,” Ieee Transactions on Nuclear Science, vol. 54, pp. 1920-1924, Dec 2007.

[4]   M. L. Alles, R. Pasternak, X. Lu, N. H. Tolk, R. D. Schrimpf, D. M. Fleetwood, R. P. Dolan, and R. W. Standley, “Second harmonic generation for noninvasive metrology of silicon-on-insulator wafers,” Ieee Transactions on Semiconductor Manufacturing, vol. 20, pp. 107-113, May 2007.

[5]   O. A. Amusan, L. W. Massengill, M. P. Baze, B. L. Bhuva, A. F. Witulski, S. DasGupta, A. L. Sternberg, P. R. Fleming, C. C. Heath, and M. L. Alles, “Directional sensitivity of single event upsets in 90 nm CMOS due to charge sharing,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2584-2589, Dec 2007.

[6]   O. A. Amusan, L. W. Massengill, B. L. Bhuva, S. DasGupta, A. F. Witulski, and J. R. Ahlbin, “Design techniques to reduce SET pulse widths in deep-submicron combinational logic,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2060-2064, Dec 2007.

[7]   M. A. Bajura, Y. Boulghassoul, R. Naseer, S. DasGupta, A. F. Witulski, J. Sondeen, S. D. Stansberry, J. Draper, L. W. Massengill, and J. N. Damoulakis, “Models and algorithmic limits for an ECC-Based approach to hardening sub-100-nm SRAMs,” Ieee Transactions on Nuclear Science, vol. 54, pp. 935-945, Aug 2007.

[8]   A. Balasubramanian, P. R. Fleming, B. L. Bhuva, O. A. Amusan, and L. W. Massengill, “Effects of random dopant fluctuations (RDF) on the single event vulnerability of 90 and 65 nm CMOS technologies,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2400-2406, Dec 2007.

[9]   M. J. Beck, R. Hatcher, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Quantum mechanical description of displacement damage formation,” Ieee Transactions on Nuclear Science, vol. 54, pp. 1906-1912, Dec 2007.

[10]  M. Bellini, B. Jun, A. K. Sutton, A. C. Appaswamy, P. Cheng, J. D. Cressler, P. W. Marshall, R. D. Schrimpf, D. M. Fleetwood, B. El-Kareh, S. Balster, P. Steinmann, and H. Yasuda, “The effects of proton and x-ray irradiation on the DC and AC performance of complementary (npn+pnp) SiGeHBTs on thick-film SOI,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2245-2250, Dec 2007.

[11]  M. F. Bernard, L. Dusseau, S. Buchner, D. McMorrow, R. Ecoffet, J. Boch, J. R. Vaille, R. D. Schrimpf, and K. LaBel, “Impact of total ionizing dose on the analog single event transient sensitivity of a linear bipolar integrated circuit,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2534-2540, Dec 2007.

[12] M. Caussanel, A. Canals, S. K. Dixit, M. J. Beck, A. D. Touboul, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Doping-type dependence of damage in silicon diodes exposed to X-ray, proton, and He+ irradiations,” Ieee Transactions on Nuclear Science, vol. 54, pp. 1925-1930, Dec 2007.

[13] D. K. Chen, E. E. Mamouni, X. J. Zhou, R. D. Schrimpf, D. M. Fleetwood, K. F. Galloway, S. Lee, H. Seo, G. Lucovsky, B. Jun, and J. D. Cressler, “Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors,” Ieee Transactions on Nuclear Science, vol. 54, pp. 1931-1937, Dec 2007.

[14] D. K. Chen, R. D. Schrimpf, D. M. Fleetwood, K. F. Galloway, S. T. Pantelides, A. Dimoulas, G. Mavrou, A. Sotiropoulos, and Y. Panayiotatos, “Total dose response of ge MOS capacitors with HfO2/Dy2O3 gate stacks,” Ieee Transactions on Nuclear Science, vol. 54, pp. 971-974, Aug 2007.

[15]  P. Cheng, B. Jun, A. Sutton, A. Appaswamy, C. D. Zhu, J. D. Cressler, R. D. Schrimpf, and D. M. Fleetwood, “Understanding radiation- and hot carrier-induced damage processes in SiGeHBTs using mixed-mode electrical stress,” Ieee Transactions on Nuclear Science, vol. 54, pp. 1938-1945, Dec 2007.

[16]  S. DasGupta, A. F. Witulski, B. L. Bhuva, M. L. Alles, R. A. Reed, O. A. Amusan, J. R. Ahlbin, R. D. Schrimpf, and L. W. Massengill, “Effect of well and substrate potential modulation on single event pulse shape in deep submicron CMOS,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2407-2412, Dec 2007.

[17]  R. M. Diestelhorst, S. Finn, B. Jun, A. K. Sutton, P. Cheng, P. W. Marshall, J. D. Cressler, R. D. Schrimpf, D. M. Fleetwood, H. Gustat, B. Heinemann, G. G. Fischer, D. Knoll, and B. Tillack, “The effects of X-ray and proton irradiation on a 200 GHz/90 GHz complementary (npn+pnp) SiGe : C HBT technology,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2190-2195, Dec 2007.

[18]  S. K. Dixit, X. J. Zhou, R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelide, R. Choi, G. Bersuker, and L. C. Feldman, “Radiation induced charge trapping in ultrathin HfO(2)-based MOSFETs,” Ieee Transactions on Nuclear Science, vol. 54, pp. 1883-1890, Dec 2007.

[19]  P. E. Dodd, J. R. Schwank, M. R. Shaneyfelt, J. A. Felix, P. Paillet, V. Ferlet-Cavrois, J. Baggio, R. A. Reed, K. M. Warren, R. A. Weller, R. D. Schrimpf, G. L. Hash, S. M. Dalton, K. Hirose, and H. Saito, “Impact of heavy ion energy and nuclear interactions on single-event upset and latchup in integrated circuits,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2303-2311, Dec 2007.

[20]  D. M. Fleetwood, M. P. Rodgers, L. Tsetseris, X. J. Zhou, I. Batyrev, S. Wang, R. D. Schrimpf, and S. T. Pantelides, “Effects of device aging on microelectronics radiation response and reliability,” Microelectronics Reliability, vol. 47, pp. 1075-1085, Jul 2007.

[21]  M. J. Gadlage, R. D. Schrimpf, B. Narasimham, B. L. Bhuva, P. H. Eaton, and J. M. Benedetto, “Effect of voltage fluctuations on the single event transient response of deep submicron digital circuits,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2495-2499, Dec 2007.

[22]  R. D. Geil, M. Mendenhall, R. A. Weller, and B. R. Rogers, “Effects of multiple scattering and surface roughness on medium energy backscattering spectra,” Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, vol. 256, pp. 631-637, Mar 2007.

[23]  C. L. Howe, R. A. Weller, R. A. Reed, B. D. Sierawski, P. W. Marshall, C. J. Marshall, M. H. Mendenhall, R. D. Schrimpf, and J. E. Hubbs, “Distribution of proton-induced transients in silicon focal plane arrays,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2444-2449, Dec 2007.

[24]  J. M. Hutson, J. D. Pellish, G. Boselli, R. Baumann, R. A. Reed, R. D. Schrimpf, R. A. Weller, and L. W. Massengill, “The effects of angle of incidence and temperature on latchup in 65 nm technology,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2541-2546, Dec 2007.

[25]  B. Jun, A. K. Sutton, R. M. Diestelhorst, G. J. Duperon, J. D. Cressler, J. D. Black, T. Haeffner, R. A. Reed, M. L. Alles, R. D. Schrimpf, D. M. Fleetwood, and P. W. Marshall, “The application of RHBD to n-MOSFETs intended for use in cryogenic-temperature radiation environments,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2100-2105, Dec 2007.

[26]  W. P. Kang, J. L. Davidson, K. Subramanian, B. K. Choi, and K. F. Galloway, “Nanodiamond lateral VFEM technology for harsh environments,” Ieee Transactions on Nuclear Science, vol. 54, pp. 1061-1065, Aug 2007.

[27]  A. V. Kauppila, G. L. Vaughn, J. S. Kauppila, and L. W. Massengill, “Probabilistic evaluation of analog single event transients,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2131-2136, Dec 2007.

[28]  A. T. Kelly, P. C. Adell, A. R. Witulski, W. T. Holman, R. D. Schrimpf, and V. Pouget, “Total dose and single event transients in linear voltage regulators,” Ieee Transactions on Nuclear Science, vol. 54, pp. 1327-1334, Aug 2007.

[29]  A. T. Kelly, P. R. Fleming, W. T. Holman, A. F. Witulski, B. L. Bhuva, and L. W. Massengill, “Differential analog layout for improved ASET tolerance,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2053-2059, Dec 2007.

[30]  T. D. Loveless, L. W. Massengill, B. L. Bhuva, W. T. Holman, R. A. Reed, D. McMorrow, J. S. Melinger, and P. Jenkins, “A single-event-hardened phase-locked loop fabricated in 130 nm CMOS,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2012-2020, Dec 2007.

[31]  T. D. Loveless, L. W. Massengill, W. T. Holman, and B. L. Bhuva, “Modeling and mitigating single-event transients in voltage-controlled oscillators,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2561-2567, Dec 2007.

[32] A. Madan, B. Jun, R. M. Diestelhorst, A. Appaswamy, J. D. Cressler, R. D. Schrimpf, D. M. Fleetwood, P. W. Marshall, T. Isaacs-Smith, J. R. Williams, and S. J. Koester, “The radiation tolerance of strained Si/SiGe n-MODFETs,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2251-2256, Dec 2007.

[33]  A. G. Marinopoulos, I. Batyrev, X. J. Zhou, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Hydrogen shuttling near Hf-defect complexes in Si/SiO(2)/HfO(2) structures,” Applied Physics Letters, vol. 91, Dec 3 2007.

[34]  C. J. Marshall, P. W. Marshall, C. L. Howe, R. A. Reed, R. A. Weller, A. Mendenhall, A. Waczynski, R. Ladbury, and T. A. Jordan, “Comparison of measured dark current distributions with calculated damage energy distributions in HgCdTe,” Ieee Transactions on Nuclear Science, vol. 54, pp. 1097-1103, Aug 2007.

[35]  L. W. Massengill, “Conference comments by the general chairman,” Ieee Transactions on Nuclear Science, vol. 54, pp. 1871-1873, Dec 2007.

[36]  M. McLain, H. J. Bamaby, K. E. Holbert, R. D. Schrimpf, H. Shah, A. Amort, M. Baze, and J. Wert, “Enhanced TID susceptibility in sub-100 nm bulk CMOS I/O transistors and circuits,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2210-2217, Dec 2007.

[37]  M. H. Mendenhall, “Fast computation of Voigt functions via Fourier transforms,” Journal of Quantitative Spectroscopy & Radiative Transfer, vol. 105, pp. 519-524, Jul 2007.

[38]  B. Narasimham, B. L. Bhuva, R. D. Schrimpf, L. W. Massengill, M. J. Gadlage, O. A. Amusan, W. T. Holman, A. F. Witulski, W. H. Robinson, J. D. Black, J. M. Benedetto, and P. H. Eaton, “Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2506-2511, Dec 2007.

[39]  B. D. Olson, O. A. Amusan, S. Dasgupta, L. W. Massengill, A. F. Witulski, B. L. Bhuva, M. L. Alles, K. M. Warren, and D. R. Ball, “Analysis of parasitic PNP bipolar transistor mitigation using well contacts in 130 nm and 90 nm CMOS technology,” Ieee Transactions on Nuclear Science, vol. 54, pp. 894-897, Aug 2007.

[40]  S. T. Pantelides, L. Tsetseris, S. N. Rashkeev, X. J. Zhou, D. M. Fleetwood, and R. D. Schrimpf, “Hydrogen in MOSFETs – A primary agent of reliability issues,” Microelectronics Reliability, vol. 47, pp. 903-911, Jun 2007.

[41]  J. A. Pellish, R. A. Reed, A. K. Sutton, R. A. Weller, M. A. Carts, P. W. Marshall, C. J. Marshall, R. Krithivasan, J. D. Cressler, M. H. Mendenhall, R. D. Schrimpf, K. M. Warren, B. D. Sierawski, and G. F. Niu, “A generalized SiGe HBT single-event effects model for on-orbit event rate calculations,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2322-2329, Dec 2007.

[42]  R. A. Reed, G. Vizkelethy, J. A. Pellish, B. Sierawski, K. M. Warren, M. Porter, J. Wilkinson, P. W. Marshall, G. Niu, J. D. Cressler, R. D. Schrimpf, A. Tipton, and R. A. Weller, “Applications of heavy ion microprobe for single event effects analysis,” Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, vol. 261, pp. 443-446, Aug 2007.

[43]  R. A. Reed, R. A. Weller, M. H. Mendenhall, J. M. Lauenstein, K. M. Warren, J. A. Pellish, R. D. Schrimpf, B. D. Sierawski, L. W. Massengill, P. E. Dodd, M. R. Shaneyfelt, J. A. Felix, J. R. Schwank, N. F. Haddad, R. K. Lawrence, J. H. Bowman, and R. Conde, “Impact of ion energy and species on single event effects analysis,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2312-2321, Dec 2007.

[44]  R. D. Schrimpf, R. A. Weller, M. H. Mendenhall, R. A. Reed, and L. W. Massengill, “Physical mechanisms of single-event effects in advanced microelectronics,” Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, vol. 261, pp. 1133-1136, Aug 2007.

[45]  J. R. Schwank, F. W. Sexton, M. R. Shaneyfelt, and D. M. Fleetwood, “Total ionizing dose hardness assurance issues for high dose rate environments,” Ieee Transactions on Nuclear Science, vol. 54, pp. 1042-1048, Aug 2007.

[46]  A. K. Sutton, M. Bellini, J. D. Cressler, J. A. Pellish, R. A. Reed, P. W. Marshall, G. Niu, G. Vizkelethy, M. Turowski, and A. Raman, “An evaluation of transistor-layout RHBD techniques for SEE, mitigation in SiGeHBTs,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2044-2052, Dec 2007.

[47]  N. H. Tolk, M. L. Alles, R. Pasternak, X. Lu, R. D. Schrimpf, D. M. Fleetwood, R. P. Dolan, and R. W. Standley, “Oxide interface studies using second harmonic generation,” Microelectronic Engineering, vol. 84, pp. 2089-2092, Sep-Oct 2007.

[48]  L. Tsetseris, D. M. Fleetwood, R. D. Schrimpf, X. J. Zhou, I. G. Batyrev, and S. T. Pantelides, “Hydrogen effects in MOS devices,” Microelectronic Engineering, vol. 84, pp. 2344-2349, Sep-Oct 2007.

[49]  L. Tsetseris, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Hydrogen-related instabilities in MOS devices under bias temperature stress,” Ieee Transactions on Device and Materials Reliability, vol. 7, pp. 502-508, Dec 2007.

[50]  M. Varadharajaperumal, G. Niu, X. Y. Wei, T. Zhang, J. D. Cressler, R. A. Reed, and P. W. Marshall, “3-D simulation of SEU hardening of SiGeHBTs using shared dummy collector,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2330-2337, Dec 2007.

[51]  G. Vizkelethy, R. A. Reed, P. W. Marshall, and J. A. Pellish, “Ion beam induced charge (IBIC) studies of silicon germanium heterojunction bipolar transistors (HBTs),” Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, vol. 260, pp. 264-269, Jul 2007.

[52]  K. M. Warren, B. D. Sierawski, R. A. Reed, R. A. Weller, C. Carmichael, A. Lesea, M. H. Mendenhall, P. E. Dodd, R. D. Schrimpf, L. W. Massengill, T. Hoang, H. Wan, J. L. De Jong, R. Padovani, and J. J. Fabula, “Monte-Carlo based on-orbit single event upset rate prediction for a radiation hardened by design latch,” Ieee Transactions on Nuclear Science, vol. 54, pp. 2419-2425, Dec 2007.

[53]  K. M. Warren, B. D. Sierawski, R. A. Weller, R. A. Reed, M. H. Mendenhall, J. A. Pellish, R. D. Schrimpf, L. W. Massengill, M. E. Porter, and J. D. Wilkinson, “Predicting thermal neutron-induced soft errors in static memories using TCAD and physics-based Monte Carlo simulation tools,” Ieee Electron Device Letters, vol. 28, pp. 180-182, Feb 2007.

[54]  K. M. Warren, R. A. Weller, B. D. Sierawski, R. A. Reed, M. H. Mendenhall, R. D. Schrimpf, L. W. Massengill, M. E. Porter, J. D. Wilkinson, K. A. Label, and J. H. Adams, “Application of RADSAFE to model the single event upset response of a 0.25 mu m CMOS SRAM,” Ieee Transactions on Nuclear Science, vol. 54, pp. 898-903, Aug 2007.

[55]  H. D. Xiong, W. Y. Wang, Q. L. Li, C. A. Richter, J. S. Suehle, W. K. Hong, T. Lee, and D. M. Fleetwood, “Random telegraph signals in n-type ZnO nanowire field effect transistors at low temperature,” Applied Physics Letters, vol. 91, Jul 30 2007.

[56]  X. J. Zhou, D. M. Fleetwood, I. Danciu, A. Dasgupta, S. A. Francis, and A. D. Touboul, “Effects of aging on the 1/f noise of metal-oxide-semiconductor field effect transistors,” Applied Physics Letters, vol. 91, Oct 22 2007.

 

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