This program is part of the Department of Defense (DoD) Multidisciplinary University Research Initiative. It involves enginneers and physicists at Vanderbilt and four other major universities. The team has received a five-year grant from the Air Force to do research on radiation induced degradation on semiconductors.

Meetings

Kick-off Meeting July 22-23, 1999 Agenda and Presentations Attendees	Annual Review 2000 October 10-11 Agenda and Presentations Attendees	Annual Review 2001 November 14-15 Agenda and Presentations Attendees
Annual Review 2002 August 20-21 Agenda and Presentations	Annual Review 2003 August 7-8 Agenda and Presentations	Final Review 2004 August 16-17 2004 Presentations (ZIP File)

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Members & Contributions

Vanderbilt University
R. Schrimpf, L. Massengill, D. Fleetwood, K. Galloway (Engineering)

• Radiation-effects experience
• Electrical characterization
• Engineering-model development
• Simulation tools

S. Pantelides, N. Tolk, & S. Pennycook (Physics)

• Atomic-scale theory
• Defects in semiconductors and insulators
• Non-linear optical characterization techniques
• Free-electron laser
• Z-contrast scanning transmission microscopy and electron energy loss spectroscopy

Air Force Institute of Technology
Robert Henegold, Michael Hogsed

Ohio State University
L. Brillson

• Cathodoluminescence spectroscopy
• Measurements of defect energy levels, densities, and cross-sections
• Spatial distributions of defects

North Carolina State University
Gerry Lucovsky

• Advanced dielectric films
• Conventional oxides
• CMOS devices

University of California, Berkeley
E. Weber

• Defect measurments
• III-V and silicon device experience
• Defects in semiconductor materials

University of Arizona
M. Neifeld

• Radiation effects in photonic devices
• Optical measurements
• Optical-device modeling

University of California, Santa Barbara
U. Mishra

• Compound semiconductor device fabrication
• GaAs on insulator devices
• GaN devices
• Device characterization and modeling

 

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