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MURI 1999 – 2004

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This program is part of the Department of Defense (DoD) Multidisciplinary University Research Initiative. It involves enginneers and physicists at Vanderbilt and four other major universities. The team has received a five-year grant from the Air Force to do research on radiation induced degradation on semiconductors.


Kick-off Meeting
July 22-23, 1999

Annual Review 2000
October 10-11

Annual Review 2001
November 14-15

Annual Review 2002
August 20-21

Annual Review 2003
August 7-8

Final Review 2004
August 16-17


Members & Contributions

Vanderbilt University
R. SchrimpfL. MassengillD. Fleetwood, K. Galloway (Engineering)

  • Radiation-effects experience
  • Electrical characterization
  • Engineering-model development
  • Simulation tools

S. Pantelides, N. Tolk, & S. Pennycook (Physics)

  • Atomic-scale theory
  • Defects in semiconductors and insulators
  • Non-linear optical characterization techniques
  • Free-electron laser
  • Z-contrast scanning transmission microscopy and electron energy loss spectroscopy

Air Force Institute of Technology
Robert Henegold, Michael Hogsed

Ohio State University
L. Brillson

  • Cathodoluminescence spectroscopy
  • Measurements of defect energy levels, densities, and cross-sections
  • Spatial distributions of defects

North Carolina State University
Gerry Lucovsky

  • Advanced dielectric films
  • Conventional oxides
  • CMOS devices

University of California, Berkeley
E. Weber

  • Defect measurments
  • III-V and silicon device experience
  • Defects in semiconductor materials

University of Arizona
M. Neifeld

  • Radiation effects in photonic devices
  • Optical measurements
  • Optical-device modeling

University of California, Santa Barbara
U. Mishra

  • Compound semiconductor device fabrication
  • GaAs on insulator devices
  • GaN devices
  • Device characterization and modeling