D. M. Fleetwood, R. A. Reber, Jr., L. C. Riewe, and P. S. Winokur (SNL), “Thermally Stimulated Current in SiO2”, Microelectron. Reliab. 39, 1323-1336 (1999). [Invited]

D. M. Fleetwood, P. S. Winokur (SNL), O. Flament, and J. L. Leray (CEA), “Stability of Trapped Electrons in SiO2”, Appl. Phys. Lett. 74, 2969-2971 (1999).

G. U. Youk, P. S. Khare, R. D. Schrimpf, L. W. Massengill, and K. F. Galloway, “Radiation-Enhanced Short Channel Effects Due to Multi-Dimensional Influence from Charges at Trench Isolation Oxides,” IEEE Trans. Nucl. Sci., vol. 46, pp. 1830-1835, 1999.

H. Barnaby, C. Cirba, R. D. Schrimpf, S. Kosier, P. Fouillat, and X. Montagner, “Minimizing Gain Degradation in Lateral PNP Bipolar Junction Transistors Using Gate Control,” IEEE Trans. Nucl. Sci., vol. 46, pp. 1652-1659, 1999.

H. J. Barnaby, R. D. Schrimpf, R. L. Pease, P. Cole, T. Turflinger, J. Krieg, J. Titus, D. Emily, M. Gehlhausen, S. C. Witczak, M. C. Maher, and D. van Nort, “Identification of Degradation Mechanisms in a Bipolar Linear Voltage Comparator Through Correlation of Transistor and Circuit Response,” IEEE Trans. Nucl. Sci., vol. 46, pp. 1666-1673, 1999.

H. J. Barnaby, R. J. Milanowski, R. D. Schrimpf, L. W. Massengill, and M. Pagey, “Modeling Ionizing Radiation Effects in Lateral PNP Bipolar Junction Transistors with Non-Uniform Trapped Charge Distributions,” J. Radiation Effects, vol. 17, pp. 75-85, 1999.

H. J. Hjalmarson, P. A. Schultz, D. J. Bowman, and D. M. Fleetwood, “A Unified Computational Approach to Oxide Aging Processes,” in Multiscale Modeling of Materials, eds: T. Diaz de la Rubia, T. Kaxiras, V. Bulatov, N. M. Ghoniem, and R. Philips, Vol. 538 (Materials Research Society, Warrendale PA, 1999), pp. 257-262.

J. Krieg, T. Turflinger, J. Titus, P. Cole, P. Baker, M. Gehlhausen, D. Emily, L. Yang, R. L. Pease, H. Barnaby, R. Schrimpf, and M. C. Maher, “Hardness Assurance Implications of Bimodal Total Dose Response in a Bipolar Linear Voltage Comparator,” IEEE Trans. Nucl. Sci., vol. 46, pp. 1627-1632, 1999.

J. R. Schwank, K. Vanheusden, M. R. Shaneyfelt, B. L. Draper, D. M. Fleetwood, W. L. Warren, T. L. Meisenheimer, J. R. Murray, and P. M. Smith, “A Novel Non-Destructive Silicon-on-Insulator Nonvolatile Memory,” SAND 99-2797, available through NTIS, (Nov. 1999).

K. Vanheusden, P. P. Korambath, H. A. Kurtz, S. P. Karna, D. M. Fleetwood, W. M. Shedd, and R. D. Pugh, “The Effect of Near-Interface Network Strain on Proton Trapping in SiO2,” IEEE Trans. Nucl. Sci. 46, 1562-1567 (1999).

K. Vanheusden (Air Force Research Lab), D. M. Fleetwood (SNL), R. A. B. Devine (France Telecom/CNET), and W. L. Warren (SNL), “Reactions and Diffusion During Annealing-Induced H+ Generation in SOI Buried Oxides”, Microel. Engineering, 48, 363-366 (1999).

K. Vanheusden (Air Force Research Lab), W. L. Warren (SNL), R. A. B. Devine (France Telecom/CNET), D. M. Fleetwood, B. L. Draper, and J. R. Schwank (SNL), “A Nonvolatile MOSFET Memory Device Based on Mobile Protons in SiO2 Thin Films”, J. Non-Cryst. Solids 254, 1-10 (1999). [Invited]

K. Warren, L. Massengill, R. Schrimpf, and H. Barnaby, “Analysis of the Influence of MOS Device Geometry on Predicted SEU Cross Sections,” IEEE Trans. Nucl. Sci., vol. 46, pp. 1363-1369, 1999.

O. Flament, P. Paillet, and J. L. Leray, and D. M. Fleetwood, “Consideration on Isochronal Anneal Technique: From Measurement to Physics,” IEEE Trans. Nucl. Sci. 46, 1526-1533 (1999).

P. E. Bunson, M. Di Ventra, S. T. Pantelides, R. D. Schrimpf, and K. F. Galloway, “Ab Initio Calculations of H+ Energetics in SiO2: Implications for Transport,” IEEE Trans. Nucl. Sci., vol. 46, pp. 1568-1573, 1999.

R. Milanowski, L. Massengill, R. Schrimpf, R. Graves, H. Barnaby, K. Galloway, M. Pagey, C. Nicklaw, E. Kelley, M. Wood, B. Offord, and J. Johann, “Radiation Hardened Semiconductor Technology Computer Aided Design,” J. Radiation Effects, vol. 17, pp. 50-57, 1999.

R. Milanowski, L. Massengill, R. Schrimpf, M. Pagey, and C. Nicklaw, “Computational Split-Lot Study of the Effect of Implant Parameters on Total-Dose-Induced Leakage,” J. Radiation Effects, vol. 17, pp. 66-74, 1999.

S. C. Lee, Y. F. Zhao, R. D. Schrimpf, M. A. Neifeld, and K. F. Galloway, “Comparison of Lifetime and Threshold Current Damage Factors for Multi-Quantum-Well (MQW) GaAs/GaAlAs Laser Diodes Irradiated at Different Proton Energies,” IEEE Trans. Nucl. Sci., vol. 46, pp. 1797-1803, 1999.

S. Kerns, D. Jiang, M. de la Bardonnie, F. Pelanchon, H. Barnaby, D. V. Kerns, Jr., R. D. Schrimpf, B. L. Bhuva, P. Mialhe, A. Hoffmann, and J.-P. Charles, “Light Emission Studies of Total Dose and Hot Carrier Effects on Silicon Junctions,” IEEE Trans. Nucl. Sci., vol. 46, pp. 1804-1808, 1999.