B. Jun, D. M. Fleetwood, R. D. Schrimpf, X. J. Zhou, E. J. Montes, and S. Cristoloveanu, “Charge separation techniques for irradiated pseudo-MOS SOI transistors”, IEEE Trans. Nucl. Sci. 50, 1891-1895 (2003).

D. M. Fleetwood and H. A. Eisen, “Total-Dose Radiation Hardness Assurance”, IEEE Trans. Nucl. Sci. 50, 552-564 (2003).

H. D. Xiong, D. M. Fleetwood, J. A. Felix, E. P. Gusev, and C. D. Emic, “Low-Frequency Noise and Radiation Response of MOS Transistors with Al2O3/SiOxNy/Si (100) Gate Stacks”, Appl. Phys. Lett. 83, 5232-5234 (2003).

J. A. Felix, M. R. Shaneyfelt, D. M. Fleetwood, T. L. Meisenheimer, J. R. Schwank, R. D. Schrimpf, P. E. Dodd, E. P. Gusev, and C. D. Emic, Radiation-induced charge trapping in thin Al2O3/SiOxNy/Si(100) gate dielectric stacks, IEEE Trans. Nucl. Sci. 50, 1910-1918 (2003).

J. Boch, D. M. Fleetwood, R. D. Schrimpf, R. R. Cizmarik, and F. Saigne, Impact of mechanical stress on total-dose effects in bipolar ICs, IEEE Trans. Nucl. Sci. 50, 2335-2340 (2003).

Kalavagunta, A.; Bo Choi; Neifeld, M.A.; Schrimpf, R.,”Effects of 2 MeV proton irradiation on operating wavelength and leakage current of vertical cavity surface emitting lasers”,Nuclear Science, IEEE Transactions on ,Volume: 50 , Issue: 6 , Dec. 2003 Pages:1982 – 1990

P.C. Adell, R.D. Schrimpf, W.T. Holman, J. Boch, J. Stacey, P. Ribero, A.L. Sternberg, K.F. Galloway,”Total-dose and single-event effects in DC/DC converter control circuitry”,Nuclear Science, IEEE Transactions on , Volume: 50 , Issue: 6 , Dec. 2003 Pages:1867 – 1872

R. A. Weller, A. L. Sternberg, L. W. Massengill, R. D. Schrimpf, and D. M. Fleetwood, Evaluating average and atypical response in radiation effects simulations, IEEE Trans. Nucl. Sci. 50, 2265-2271 (2003).

R. Pasternak, A. Chatterjee, Y. V. Shirovkaya, B. K. Choi, Z. Marka, J. K. Miller, R. G. Albridge, S. N. Rashkeev, S. T. Pantelides, R. D. Schrimpf, D. M. Fleetwood, and N. H. Tolk, Contactless ultra-fast laser probing of radiation-induced leakage current in ultra-thin oxides, IEEE Trans. Nucl. Sci. 50, 1929-1933 (2003).

R. Pasternak, Y. V. Shirovkaya, Z. Marka, J. K. Miller, S. N. Rashkeev, S. T. Pantelides, N. H. Tolk, B. K. Choi, R. D. Schrimpf, and D. M. Fleetwood, “Laser Detection of Radiation Enhanced Electron Transport in Ultra-Thin Oxides”, Nucl. Instrum. Meth. Phys. Res. A 514, 150-155 (2003).

S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, Statistical modeling of radiation-induced proton transport in Si: deactivation of dopant acceptors in bipolar devices, IEEE Trans. Nucl. Sci. 50, 1896-1900 (2003).

S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Radiation-Induced Acceptor Deactivation in Bipolar Devices: Effects of Electric Field”, Appl. Phys. Lett. 83, 4646-4648 (2003).

V. A. K. Raparla, S. C. Lee, R. D. Schrimpf, D. M. Fleetwood, and K. F. Galloway, A Model of Radiation Effects in Nitride-Oxide Films for Power MOSFET Applications, Solid-St. Electron. 47, 775-783 (2003).

X. Hu, A. P. Karmarkar, B. Jun, D. M. Fleetwood, R. D. Schrimpf, R. D. Geil, R. A. Weller, B. D. White, M. Bataiev, L. J. Brillson, and U. K. Mishra, Proton irradiation effects on AlGaN/AlN/GaN high electron mobility transistors, IEEE Trans. Nucl. Sci. 50, 1791-1796 (2003).

Y. Jiang, R. Pasternak, Z. Marka, Y. V. Shirovkaya, J. K. Miller, S. N. Rashkeev, Yu. D. Glinka, I. E. Perakis, P. K. Roy, J. Kozub, B. K. Choi, D. M. Fleetwood, R. D. Schrimpf, X. Liu, Y. Sasaki, J. K. Furdyna, and N. H. Tolk, “Spin/Carrier Dynamics at Semiconductor Interfaces Using Intense, Tunable Ultra-Fast Lasers,” Phys. Stat. Sol. (b) 240, 490-499 (2003).

Z. Marka, R. Pasternak, R. G. Albridge, S. N. Rashkeev, S. T. Pantelides, N. H. Tolk, B. K. Choi, D. M. Fleetwood, and R. D. Schrimpf (VU), Two-Color Optical Technique for Characterization of X-ray Radiation-Enhanced Electron Transport in SiO2, J. Appl. Phys. 93, 1865-1870 (2003).