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1999 Conference Presentations

A. N. Campbell, P. Tangyunyong, J. R. Jessing, C. E. Hembree, D. M. Fleetwood, S. E. Swanson, J. M. Soden, N. Antoniou, W. E. Vanderlinde, and M. T. Abramo, “Focused Ion Beam Induced Effects on MOS Transistor Parameters,” Proc. 25th Intl. Sympos. Testing & Failure Analysis, Santa Clara, CA, Nov. 14-18, 1999.

D. M. Fleetwood and P. S. Winokur (SNL), “Radiation Effects in the Space Telecommunications Environment”, Proceedings of the 22nd Annual Conference on Microelectronics, edited by N. Stojadinovic, Nis, Yugoslavia, 1999. [Invited]

H. J. Barnaby, C. Cirba, R. D. Schrimpf, S. Kosier, P. Fouillat, and X. Montagner, “Modeling BJT Radiation Response with Non-Uniform Energy Distributions of Interface Traps,” in RADECS Proc., pp. 75-79, 1999.

H. J. Hjalmarson, P. A. Schultz, D. J. Bowman, and D. M. Fleetwood (SNL), “A Unified Computational Approach to Oxide Aging Processes, in Multiscale Modeling of Materials”, eds: T. Diaz de la Rubia, T. Kaxiras, V. Bulatov, N. M. Ghoniem, and R. Philips, Vol. 538 (Materials Research Society, Warrendale PA, 1999), pp. 257-262.

J. Hofmeister, H. G. Parks, B. Vermeire, Z. Murshalin, R. Graves, R. D. Schrimpf, and K. F. Galloway, “Concept and Initial Feasibility of Contamination TCAD by Integration with Commercial Software,” in Proc. 10th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference, pp. 426-429, 1999.

J. Liu, R. D. Schrimpf, L. Massengill, K. F. Galloway, and J. O. Attia, “Circuit-Level Model for Single-Event Burnout in N-Channel Power MOSFETs,” in RADECS Proc., pp. 173-179, 1999.

P. E. Bunson, R. D. Schrimpf, M. Di Ventra, and S. T. Pantelides, “Diffusion of H in SiO2 : An Ab-Initio Study,” presented at APS March Meeting, 1999.

P. Paillet, V. Ferlet-Cavrois, J. R. Schwank, and D. M. Fleetwood, “Response of SIMOX and Unibond Buried Oxides: Trapping and Detrapping Properties,” Proc. 5th European Conference on Radiation and Its Effects on Components and Systems, Fontevraud, France, Sept. 13-17, 1999, pp. 328-332.

R. Milanowski, M. Pagey, J. Conley, L. Massengill, R. Schrimpf, and K. Galloway, “Total Dose Radiation-Effects Simulation Using Three-Carrier Transport in SiO2 ,” in GOMAC Digest, pp. 758-761, 1999.

S. K. Mukundan, M. P. Pagey, R. D. Schrimpf, and K. F. Galloway, “Simulation of hot-carrier degradation using self-consistent solution of semiconductor energy-balance equations and oxide carrier transport equations,” in Integrated Reliability Workshop Final Report, pp. 92-97, 1999.


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