2003 Conference Presentations
C. R. Cirba, S. Cristoloveanu, R. D. Schrimpf, L. C. Feldman, D. M. Fleetwood, and K. F. Galloway, “Total-Dose Radiation Hardness of Double-Gate Ultra-Thin SOI MOSFETs”, PV 2003-05 Silicon-on-Insulator Technology and Devices XI, edited by S. Cristoloveanu, G. K. Celler, J. G. F. Gamiz, K. Izumi, and Y. W. Kim (The Electrochemical Society), pp. 493-498 (2003).
D. M. Fleetwood, S. N. Rashkeev, Z. Y. Lu, C. J. Nicklaw, J. A. Felix, R. D. Schrimpf, and S. T. Pantelides, “Dipoles in SiO2: Border Traps or Not?”, PV 2003-02 Silicon Nitride and Silicon Dioxide Thin Insulating Films (7th), edited by R. E. Sah, K. B. Sunda, J. Deen, D. Landheer, W. D. Brown, and D. Misra (The Electrochemical Society), pp. 291-307 (2003).
D. M. Fleetwood, “Microstructures of Defects Causing Noise in MOS Devices”, in Noise as a Tool for Studying Materials, edited by M. B. Weissman, N. E. Israeloff, and S. Kogan (Proc. SPIE Vol. 5112), pp. 259-270 (2003).
D. M. Fleetwood, “Forum: North of the Border”, The Industrial Physicist 9, No. 6, 26-27 (2003).
H. D. Xiong, D. M. Fleetwood, and J. R. Schwank, “Low Frequency Noise and Radiation Response of Buried Oxides in SOI nMOS Transistors”, in Noise in Devices and Circuits, edited by M. J. Deen, Z. Celik-Butler, and M. E. Levinshtein (Proc. SPIE Vol. 5113), pp. 44-55 (2003).
L. Tsetseris, X. Zhou, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Field-Induced Reactions of Water Molecules at Si-Dielectric Interfaces”, E3.3, MRS Proc. 786, Boston, MA (2003).