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Ron Schrimpf, PhD

Orrin Henry Ingram Professor of Engineering
Director, ISDE
Google Scholar Profile
Dr. Ron Schrimpf is the Orrin Henry Ingram Professor of Electrical Engineering at Vanderbilt University and the founding Director of Vanderbilt’s Institute for Space and Defense Electronics (ISDE). He received his B.E.E., M.S.E.E., and Ph.D. degrees from the University of Minnesota in 1981, 1984, and 1986, respectively, and served as a Professor of Electrical and Computer Engineering at the University of Arizona prior to joining Vanderbilt in 1996. Ron’s research activities focus on semiconductor device physics, particularly radiation effects and reliability in microelectronics and semiconductor devices. Ron has been a Principal Investigator for programs funded by the Defense Threat Reduction Agency, the U.S. Navy, and the Air Force Office of Scientific Research. He has served as PI for two Multi-Disciplinary University Research Initiative (MURI) programs on radiation effects in electronics. Ron is a Fellow of the IEEE and is currently President of the IEEE Nuclear and Plasma Sciences Society.
Highlighted Publications:
F. Faccio, G. Borghello, E. Lerario, D. M. Fleetwood, R. D. Schrimpf, H. Gong, E. X. Zhang, P. Wang, S. Michelis, S. Gerardin, A. Paccagnella, and S. Bonaldo, “Influence of LDD spacers and H+ transport on the total-ionizing-dose response of 65-nm MOSFETs irradiated to ultrahigh doses,” IEEE Trans. Nucl. Sci., vol. 65, pp. 164-174, 2018.
D. R. Ball, B. D. Sierawski, K. F. Galloway, R. A. Johnson, M. L. Alles, A. L. Sternberg, A. F. Witulski, R. A. Reed, R. D. Schrimpf, A. Javanainen, and J. Lauenstein, “Estimating terrestrial neutron-induced SEB cross sections and FIT rates for high-voltage SiC power MOSFETs,” IEEE Transactions on Nuclear Science, vol. 66, pp. 337-343, 2019.
J. D. Black, J. A. Dame, D. A. Black, P. E. Dodd, M. R. Shaneyfelt, J. Teifel, J. G. Salas, R. Steinbach, M. Davis, R. A. Reed, R. A. Weller, J. M. Trippe, K. M. Warren, A. M. Tonigan, R. D. Schrimpf, and R. S. Marquez, “Using MRED to screen multiple-node charge-collection mitigated SOI layouts,” IEEE Transactions on Nuclear Science, vol. 66, pp. 233-239, 2019.
J. Fang, M. V. Fischetti, R. D. Schrimpf, R. A. Reed, E. Bellotti, and S. T. Pantelides, “Electron transport properties of AlxGa1-xN/GaN transistors based on first-principles calculations and Boltzmann-equation Monte Carlo simulations,” Physical Review Applied, vol. 11, article number 044045, 2019.
H. Gong, K. Ni, E. X. Zhang, A. L. Sternberg, J. A. Kozub, M. L. Alles, R. A. Reed, D. M. Fleetwood, R. D. Schrimpf, N. Waldron, B. Kunert, and D. Linten, “Pulsed-laser induced single-event transients in InGaAs FinFETs on bulk silicon substrates,” IEEE Transactions on Nuclear Science, vol. 66, pp. 376-383, 2019.