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Mike McCurdy

ISDE Senior Staff Engineer
Google Scholar Profile
Mike McCurdy is a Senior Staff Engineer at ISDE where he started in 2004. His focus is mainly on radiation effects testing of microelectronics and circuits for performance characterization and model parameter extraction. Mr. McCurdy has extensive radiation test experience at many facilities including national/government, university, private/commercial labs and Vanderbilt, where he manages the labs. He received both his M.S. and B.E. in Electrical Engineering from Vanderbilt University and is an IEEE Senior Member.
Highlighted Publications:
T. D. Haeffner, R. F. Keller, R. Jiang, B. D. Sierawski, M. W. McCurdy, E. X. Zhang, R. W. Mohammed, D. R. Ball, M. L. Alles, R. A. Reed, R. D. Schrimpf, D. M. Fleetwood, “Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 K and 295 K,” IEEE Trans. Nucl. Sci. vol 66, no. 6, 911-917, June 2019, DOI: 10.1109/TNS.2019.2909720.
Hailong Chen, Hao Jia, Wenjun Liao, Vida Pashaei, Charles N. Arutt, Michael W. McCurdy, Christian A. Zorman, Robert A. Reed, Ronald D. Schrimpf, Michael L. Alles, Philip X.-L. Feng, “Probing Heavy Ion Radiation Effects in Silicon Carbide (SiC) via 3D Integrated Multimode Vibrating Diaphragms,” Appl. Phys. Lett. 114, 101901, Mar 11, 2019, DOI: 10.1063/1.5063782.
M. W. McCurdy, R. D. Schrimpf, D. M. Fleetwood, K. Bole and B. S. Poling, “1.8 MeV Proton Testing of Thermally Stablilized GaN HEMT Power Devices in Three Operational Modes,” Proc. IEEE NSREC Radiation Effects Data Workshop, New Orleans, LA, July 17-21, 2017, pp 266-270, DOI: 10.1109/NSREC.2017.8115472.
D. Caudel, M. W. McCurdy, D. M. Fleetwood, R. A. Reed, R. A. Weller, B. Goodwin, E. Rowe, V. Buliga, M. Groza, K. Stassun, and A. Burger, “Radiation damage of strontium iodide crystals due to irradiation by 137Cs gamma rays: A novel approach to altering nonproportionality,” Nucl. Instrum. Meth. Phys. Research A, vol. 835, pp. 171-181, Aug. 2016, DOI: 10.1016/j.nima.2016.08.041.
P. Nsengiyumva, D. R. Ball, J. S. Kauppila, N. Tam, M. McCurdy, W. T. Holman, M. L. Alles, B. L. Bhuva, and L. W. Massengill, “A Comparison of the SEU Response of Planar and FinFET D Flip-Flops at Advanced Technology Nodes,” IEEE Trans. Nucl. Sci., vol. 63, no. 1, 266-272, Feb. 2016, DOI: 10.1109/TNS.2015.2508981.