Kevin Warren is a Senior Electrical Engineer for the Institute for Space and Defense Electronics. His current focus is on modeling the soft error response of microelectronics for terrestrial and space applications. He is part of a team that uses detailed analysis at the circuit and device level in conjunction with physics based Monte-Carlo radiation transport tools to identify radiation sensitive designs, predict soft error rates, and develop optimization strategies for improving radiation hardness. Previous projects at ISDE include the design and development of radiation effects test structures and test plans for model development and technology characterization related to the Trident D5LE program.

He received his B.S. degree in chemistry with an emphasis in biochemistry from Tennessee Technological University in 1994, M.S. in Chemistry at Vanderbilt University in 1997 where he investigated the nonlinear optical properties of quantum dots in silica-xerogels fabricated by synthetic chemical methods. He received his M.S. in Electrical Engineering from Vanderbilt University in 1999, and his Ph.D. in Electrical Engineering in 2010 on Monte Carlo based SEU rate prediction in sequential logic.

Previous employment was at Raytheon ITSS as a contractor at the Marshall Space Flight Center from 1998 to 2000 where he supported the component group as a radiation effects engineer for the International Space Station and the Space Shuttle Programs. He then worked at the Johns Hopkins University Applied Physics Laboratories as a specialist in the testing and qualification of electronic parts for multiple unmanned space exploration projects, including the CONTOUR and MESSENGER programs. His responsibilities included the development of custom test hardware and software for electrical and radiation testing of integrated circuits. In 2003, he joined the Institute for Space and Defense Electronics.

Publications:

K. M. Warren, R.A. Reed, R.A. Weller, M.H. Mendenhall, B.D. Sierawski, R.D. Schrimpf, “Applications of Monte Carlo Radiation Transport Simulation Techniques for Predicting Single Event Effects in Microelectronics,” Accepted for publication 2010 Nuclear and Instrument Methods B.

K. M. Warren, R.A. Reed, R.A. Weller, M.H. Mendenhall, B.D. Sierawski, R.D. Schrimpf, “Applications of Monte Carlo Radiation Transport Simulations Techniques for Predicting Single Event Effects in Microelectronics,” Presented at the 21st International Conference on the Application of Accelerators in Research and Industry, 2010.

K.M. Warren, C. Slayman and J. Wilkinson, “Mechanisms, Modeling, Measurement and Mitigation of Soft Errors,” 2010 International Reliability Physics Symposium Short Course, Anaheim Ca.

K.M. Warren, R.A. Reed, A. Sternberg, R.A. Weller, L.W. Massengill, R.D. Schrimpf, M. Baze, “Single Event Upset Rate Prediction Methods for Circuit-level Hardened Devices,” Presented at the 2010 Single Event Effects Symposium, San Diego, Ca.

K.M. Warren, A.L. Sternberg, J.D. Black, R.A. Weller, R. A. Reed, M.H. Mendenhall, R.D. Schrimpf, L.W. Massengill, “Heavy Ion Testing and Single Event Upset Rate Prediction Considerations for a DICE Flip-Flop,” IEEE Trans. Nucl. Sci., Vol. 56, No. 6, December. 2009. Pp 3130 – 3137.

K.M. Warren, A.L. Sternberg, R.A. Weller, M. P. Baze, L.W. Massengill, R.A. Reed, M.H. Mendenhall, R.D. Schrimpf, “Integrating Circuit Level Simulation and Monte-Carlo Radiation Transport Code for Single Event Upset Analysis in SEU Hardened Circuitry,” IEEE Trans. Nucl. Sci., Vol. 55, No. 6, December 2008. Pp 2886-2894.

K.M. Warren, B.D. Sierawski, R. A. Reed, M. E. Porter, M. H. Mendenhall, R. D. Schrimpf, L. W. Massengill, “Predicting Neutron Induced Soft Error Rates: Evaluation of Accelerated Ground Based Test Methods,” Proceedings of the 2008 International Reliability and Physics Symposium. April 2008.

K.M. Warren, B.D. Sierawski, R.A. Reed, R.A. Weller, C. Carmichael, A. Lesea, M.H. Mendenhall, P.E. Dodd, R.D. Schrimpf, L.W. Massengill, T. Hoang, H. Wan, JL Jong, R. Padovani, J. Fabula, “Monte-Carlo Based On- Orbit Single Event Upset Rate Prediction for a Radiation Hardened by Design Latch,” IEEE Trans. Nucl. Sci., Vol 54, No. 6. December 2007. pp 2419-2425.

K.M. Warren, et al. “Modeling Alpha and Neutron Induced Soft Errors in Static Random Access Memories”, 2007 ICICDT Conference Presentation.

K.M. Warren, B.D. Sierawski, R.A. Weller, R.A. Reed, M.H. Mendenhall, J.A. Pellish, R.D. Schrimpf, L.W. Masengill, M.E. Porter, J.W. Wilkinson, “Predicting Thermal Neutron-Induced Soft Errors in Static Memories Using TCAD and Physics-Based Monte Carlo Simulation Tools,” Elec. Dev. Letters, Vol. 28, issue 2, February 2007. pp 180-182.

K. M. Warren, R. A. Weller, B. Sierawski, R. A. Reed, M. H. Mendenhall, R. D. Schrimpf, L. W. Massengill, M. Porter, J. Wilkinson, K. A. LaBel, and J. Adams, “Application of RADSAFE to Model Single Event Upset Response of a 0.25 um CMOS SRAM,” IEEE Trans. Nucl. Sci., Vol. 54, No. 4, August 2007, pp 898-903.

K.M. Warren, R.A. Weller, R.A., M.H. Mendenhall, R.A. Reed, D.R. Ball, C.L. Howe, B.D. Olson, M.L. Alles, L.W. Massengill, R.D. Schrimpf, N.F. Haddad, S.E. Doyle, D. McMorrow, J.S. Melinger, W.T. Lotshaw, “The Contribution of Nuclear Reactions to Heavy Ion Single Event Upset Cross-section Measurements in a High-density SEU Hardened SRAM,” IEEE Trans. Nuc. Sci. Vol 52, Dec. 2005 p2125 – 2131.

K. Warren, D. Roth, J. Kinnison, R. Pappalardo, “Single Event Burnout of NPN Bipolar Junction Transistors in Hybrid DC/DC Converters.” Trans. Nuc. Sci., Vol. 49, Dec 2002 p 3097.

K. Warren, D Roth, J. Kinnison. R. Pappalardo, “Single Event Testing of DC/DC Converters for Space Flight.” 2002 IEEE NSREC Data Workshop, p 106. K. Warren, D. Roth, J. Kinnison, B. Carkuff, “Single Event Latchup and Total Dose Testing of Candidate Spacecraft Components.” 2001 IEEE NSREC Data Workshop, p 100.

K. Warren, L. Massengill, R. Schrimpf, H. Barnaby, “Analysis of the Influence of MOS Device Geometry on Predicted SEU Cross Sections.” Trans. Nucl. Sci, Vol 46, 1998, p 1363.

“Sensitive Volume Models For Single Event Upset Analysis and Rate Prediction for Space, Atmospheric, and Terrestrial Radiation Environments”, Ph.D. Dissertation. August 2010. Available on-line at http://etd.library.vanderbilt.edu/available/etd-06302010-123902/

“Measurement of b and n 2 for Platinum/silica-xerogel Nanocomposites and Preparation of Gold Quantum Dots on Sodium Bicarbonate”, M.S. Chemistry, Vanderbilt University, 1997.

“The Influence of SOI-MOSFET Geometry on Predicted Single Event Cross Sections” M.S. Electrical Engineering, Vanderbilt University , 1999.

B. Narasimham, J. K. Wang, M. Buer, R. Gorti, K. Chandrasekharan, Broadcom Corporation; K. M. Warren, B. D. Sierawski, R. D. Schrimpf, R. A. Reed, R. A. Weller, “Contribution of Control Logic Upsets and Multi-Node Charge Collection to Flip-Flop SEU Cross-Section in 40-nm CMOS,” Accepted for publication in 2010 IEEE Trans. Nucl. Sci. M. L. Alles, D. R. Ball, T. D. Loveless,

K. L. Warren, L. W. Massengill, “Analysis of the SEU Characteristics of a 45 nm CMOS SOI SRAM,” Accepted for publication in 2010 IEEE Trans. Nucl. Sci.

B.D. Sierawski, K.M. Warren, R.A. Reed, R.A. Weller, M.H. Mendenhall, R.D. Schrimpf, R.C. Baumann, V. Zhu , “Contribution of low-energy (? 10 MeV) neutrons to upset rate in a 65 nm SRAM,” Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.395-399, 2-6 May 2010.

V.B. Sheshadri, B.L. Bhuva, R.A. Reed, R.A. Weller, M.H. Mendenhall, R.D. Schrimpf, K.M. Warren, B.D. Sierawski, S. Wen, R. Wong, “Effects of multi-node charge collection in flip-flop designs at advanced technology nodes,” Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.1026-1030, 2-6 May 2010.

R.A. Weller, M.H. Mendenhall, R.A. Reed, R.D. Schrimpf, K.M. Warren, B.D. Sierawski, L.W. Massengill, “Monte Carlo Simulation of Single Event Effects,” IEEE Trans. Nucl. Science, Vol. 57, No.4, pp.1726-1746, Aug. 2010

R.A. Weller, R.A. Reed, K.M. Warren, M.H. Mendenhall, B.D. Sierawski, R.D. Schrimpf, L.W. Massengill, “General Framework for Single Event Effects Rate Prediction in Microelectronics,” IEEE Trans. Nucl. Science, Vol. 56, No. 6, pp.3098-3108, Dec. 2009.

B.D. Sierawski, J.A. Pellish, R.A. Reed, R.D. Schrimpf, K.M. Warren, R.A. Weller, M.H. Mendenhall, J.D. Black, A.D. Tipton, M.A. Xapsos, R.C. Baumann, X. Deng, M.J. Campola, Friendlich, H.S. Kim, A.M. Phan, C.M. Seidleck, “Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions,” IEEE Trans. Nucl. Sci., Vol. 56 No. 6, December 2009. Pp. 3085-3092.

R.A. Weller, R.A Reed, K.M. Warren, M.H. Mendenhall, B.D. Sierawski, R.D. Schrimpf, L.W. Massengill, “General Framework for Single Event Effects Rate Prediction in Microelectronics,” IEEE Trans. Nucl. Sci., Vol. 56, No. 6, December 2009. Pp 3098-3108.

R.D. Schrimpf, K.M. Warren, R.A. Weller, R.A. Reed, L.W. Massengill, M.L. Alles, D.M. Fleetwood, X.J. Zhou, L. Tsetseris, S.T. Pantelides, “Reliability and radiation effects in IC technologies,” 2008 Reliability Physics Symposium April 27 2008-May 1 2008 Pp 97 – 106.

M.J. Gadlage, R.D. Schrimpf, B. Narasimham, J.A. Pellish, K.M. Warren, R.A. Reed, B.L. Bhuva, L.W. Massengill, Xiaowei Zhu, “Assessing Alpha Particle-Induced Single Event Transient Vulnerability in a 90-nm CMOS Technology,” IEEE Elec. Dev. Let., Vol. 29, No. 6, June 2008. Pp 638-640.

R. D. Schrimpf, K. M. Warren, D. R. Ball, R. A. Weller, R. A. Reed, D. M. Fleetwood, L. W. Massengill, Marcus H. Mendenhall, Sergey. N. Rashkeev, Sokrates T. Pantelides, and Michael A. Alles, “Multi-Scale Simulation of Radiation Effects in Electronic Devices,” IEEE Trans. Nucl. Sci., Vol. 55, No. 4, August 2008. Pp 1891-1902.

J. D. Black, D. R. Ball II, K. M. Warren, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, W. H. Robinson, A. D. Tipton, D. A. Black, P. E. Dodd, N. F. Haddad, “Characterizing SRAM Single Event Upset in Terms of Single and Double Node Charge Collection ,” IEEE Trans. Nucl. Sci., Vol. 55, No. 6, December 2008. Pp 2943-2947.

M. Porter, J. Wilkinson, K. Walsh, B. Sierawski, K. Warren, “Soft error reliability improvements for implantable medical devices, “ Proceedings of the 2008 International Reliability and Physics Symposium. April 2008.

M. Turowski, A. Fedoseyev, A. Raman, K. M. Warren, M. L. Alles, “Mixed- Mode Modeling of Radiation Effects with Nuclear Reactions in Nanoscale Electronics , “ 2008 GOMAC.

B. Hughlock, M. Baze, K. Warren, “RHBD Sequential Logic SEU Error Rates in Space Are Limited by Ions Incident at Grazing Angles,” 2008 GOMAC Conference.

P.E. Dodd, Schwank, J. R. Shaneyfelt, M. R., Felix, J. A., Paillet, P., Ferlet-Cavrois, V., Baggio, J., Reed, R. A., Warren, K. M., Weller, R. A., Schrimpf, R. D., Hash, G. L., Dalton, S. M., Hirose, K., Saito, H., “Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits,” IEEE Trans. Nucl. Sci., Vol. 54, No. 6, December 2007, pp. 2303-2311.

R.A. Reed, R.A. Weller, M.H. Mendenhall, J.-M Lauenstein, K.M. Warren, J.A. Pellish, R.D. Schrimpf, B.D. Sierawski, L.W. Massengill, P.E. Dodd, M.R. Shaneyfelt, J.A. Felix, J.R. Schwank, N.F. Haddad, R.K. Lawrence, J.H. Bowman, R. Conde, “Impact of Ion Energy and Species on Single Event Effects Analysis,” IEEE Trans. Nucl. Sci., Vol 54. No. 6, December 2007. pp. 2312-2321.

J. A. Pellish, Reed, R. A., Sutton, A. K., Weller, R. A., Carts, M. A., Marshall, P. W., Marshall, C. J., Krithivasan, R., Cressler, J. D., Mendenhall, M. H., Schrimpf, R. D., Warren, K. M., Sierawski, B. D., Niu, G. F., “A Generalized SiGe HBT Single-Event Effects Model for On-Orbit Event Rate Calculations,” IEEE Trans. Nucl. Sci.,Vol. 54, No. 6. December 2007. pp. 2322-2329.

R.A. Reed, R.A. Weller, R. D. Schrimpf, M.H. Mendenhall, K.M. Warren, and L.W. Massengill, “Implications of Nuclear Reactions for Single Event Effects Test Methods and Analysis,” IEEE Trans. Nuc. Sci., Vol 53, Dec. 2006. pp. 3356-3362.

Olson, B.D., Amusan, O.A., Dasgupta, S., Massengill, L.W., Witulski, A.F., Bhuva, B.L., Alles, M.L., Warren, K.M., Ball, D.R, “Analysis of Parasitic PNP Bipolar Transistor Mitigation Using Well Contacts in 130 nm and 90 nm CMOS Technology,” IEEE Trans. Nucl. Sci., Vol. 54, No. 4. August 2007, pp. 894-897.

D.R. Ball, K.M. Warren, R.A. Weller, R.A. Reed, A. Kobayashi, J.A. Pellish, M.H. Mendenhall, C.L. Howe, L.W. Massengill, R.D. Schrimpf, N.F. Haddad, “Simulating Nuclear Events in a TCAD Model of a High- Density SEU Hardened SRAM Technology,” IEEE Trans. Nuc. Sci., Vol. 53, Aug. 2006.pp. 1794 – 1798.

N F. Haddad, T. Bach, T. Conway, D. Lawson, J. Ross, J. Rodgers, A. Tipton, D Ball, K Warren and R. Schrimpf, “Eliminating Low LET Sensitivities in Deep Sub-Micrometer SRAM through Non-intrusive Technology Features, ” 2007 RADECS Proceedings.

C.L. Howe, R.A. Weller, R.A. Reed, M.H. Mendenhall, R.D. Schrimpf, K.M. Warren, D.R. Ball, L.W. Massengill, K.A. LaBel, J.W. Howard, N.F. Haddad, “Role of Heavy-ion Nuclear Reactions in Determining On-orbit Single Event Error Rates,” IEEE Trans. Nuc. Sci. Vol. 52, Dec. 2005. pp. 2182 – 2188.

B.D. Olson, D.R. Ball, K.M. Warren, L.W. Massengill, N.F. Haddad, S.E. Doyle, D. McMorrow, “Simultaneous Single Event Charge Sharing and Parasitic Bipolar Conduction in a Highly-Scaled SRAM Design”, IEEE Trans. Nuc. Sci. Vol. 52, Dec. 2005. pp. 2132 – 2136.

A. S. Kobayashi, D. R. Ball, K. M. Warren, R. A. Reed, M. H. Mendenhall, R. D. Schrimpf, , and R. A. Weller, “The effect of metallization layers on single event susceptibility,” IEEE Trans. Nucl. Sci., 52(6), December 2005. pp. 2189-2193

D. McMorrow, W.T. Lotshaw, J.S. Melinger, S. Buchner, J.D. Davis, R.K. Lawrence, D. Haddad, J.H. Bowman, R.D. Brown, D. Carlton, J Pena, J. Vasquez, K.M. Warren, and L.W. Massengill, “Single-Event Upset in Flip- Chip SRAM induced by Through-Wafer, Two-Photon Absorption.” IEEE Trans. Nuc. Sci, Vol. 52, No. 6, December 2007. pp. 2421-2425.

 

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