Dr. Michael Alles is a Senior Research Engineer with Vanderbilt’s Institute for Space and Defense Electronics (ISDE) where he works in the area of radiation effects in microelectronics. He spent two years as a Business Unit Director for Silvaco International, 10 years with Ibis Technology Corporation in technology and product development, and one year with Harris Semiconductor as a design engineer. Dr. Alles has a strong background in semiconductor technology, including silicon and SOI wafer manufacturing and metrology, computer aided design tools for semiconductor fabrication processes, devices, and integrated circuit design, and expertise in modeling and simulation of radiation effects in semiconductor devices and circuits. Dr. Alles has served on the SIA ITRS starting materials working group since 1999, serving as chairman of the SOI materials group for the 2001 revision of ITRS, and has been a reviewer for Transactions on Nuclear Science 3 times. He has experience as an instructor in college and industrial training courses, has given over 10 technical and business presentations at conferences and trade shows, developed and presented IPO roads shows, given numerous technical marketing presentations, has over 25 technical/trade publications and has 1 patent. During his time in industry, he developed and implemented internal company training programs. Dr. Alles received his Ph.D. in Electrical Engineering (12/92), M.S. in Electrical Engineering (8/90), and his B.E. in Electrical Engineering with a Double Major in Physics (5/87) all from Vanderbilt University . He was a Harold Stirling Vanderbilt Graduate Select Scholar, received a Vanderbilt University Honor Scholarship (1983-1988), has been listed in Who’s Who Among Students in American Universities and Colleges, and was a Member Eta Kappa Nu, Sigma Pi Sigma, and Tau Beta Pi Honor Societies. He is a member of IEEE, the Electron Devices Society, and the Nuclear and Plasma Sciences Society.
M. Alles, J. Dunne, C. Treadwell, B. Fiordalice, and R. Nguyen, Application of Laser Scattering and Optical Defect Detection Methods to SIMOX-SOI Wafers, 2001 IEEE International SOI Conference, October 2001.
M. Alles, J. Dunne, S. MacNish, M. Burns, L. Cheung. Defect Control Methods for SIMOX SOI Wafer Manufacture and Processing, 2000 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, September 2000.
M. Alles, M. Anc, R. Dolan, M. Mendicino, and S. MacNish. Optical Metrology on SIMOX-SOI Wafers, Silicon Wafer Symposium Proceedings, Semicon West, July 2000.
M. Alles, Ibis Technology Corporation Overview, Semiconductor Industry Conference, New York Society of Securities Analysts, New York , NY , August 20, 1997.
M. Alles, “SPICE Analysis of SEU Sensitivity of a Fully Depleted SOI SRAM Cell, 1994 IEEE Nuclear and Space Radiation Effects Conference, Tucson AZ, December 1994.
M. Alles, W. Krull, and L. Allen, “Implications of Thin Buried Oxide for SIMOX Circuit Performance”, Abstract No. 550, ECS’94 International Symposium on SOI Technology and Devices, San Francisco CA , May 22-27, 1994.
M. Alles, L. W. Massengill, S. Kerns, K. Jones, J. Clark, and W. Kraus, “Effect of Temperature-Dependent Bipolar Gain Distribution on SEU Vulnerability of SOI CMOS SRAMs”, 1992 IEEE SOI Technology Conference, Ponte Vedra, Florida, October 1992.
M. Alles, K. Jones, J. Lee, J. Clark, and W. Kraus, “Rad-Hard SOI/SRAM Design Using A Predictive SEU Model”, 1990 Government Microcircuit Applications Conference, Reno , Nevada , November 1990.
M. Alles, J. Lee, L. Massengill, and S. Kerns, “High Frequency Diffusion Capacitance in SOI/SEU Modeling”, 1990 SOS/SOI Technology Workshop, Key West, Florida, September 1990.
M. Alles, S. Kerns, L. Massengill, D. Kerns, Jr., T. Houston, H. Lu, and L. Hite, “Single-Event Vulnerability Characterization of CMOS-SOI Transistors”, 1989 Government Microcircuit Applications Conference, Orlando, Florida, November 1989.