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Daniel Fleetwood

Daniel M. Fleetwood received his B. S., M. S., and Ph. D. degrees in Physics from Purdue University in 1980, 1981, and 1984. Dan joined Sandia National Laboratories in Albuquerque, New Mexico, in 1984, and was named a Distinguished Member of the Technical Staff in the Radiation Technology and Assurance Department in 1990. In 1999 he left Sandia to accept the position of Professor of Electrical Engineering at Vanderbilt University in Nashville, Tennessee. In 2000, he was also named a Professor of Physics, in 2001 he was appointed Associate Dean for Research of the Vanderbilt School of Engineering, and in 2003 he was named Chair of the Electrical Engineering and Computer Science Department. Dan is the author of more than 270 publications on radiation effects in microelectronics, ten of which have been recognized with Outstanding Paper Awards. In 1997 Dan received R&D 100 and Industry Week Magazine awards for co-invention of a new type of computer memory chip based on mobile protons in SiO2. This chip was also recognized as Discover Magazine’s 1998 Invention of the Year in computer hardware and electronics. Dan is a Fellow of both the Institute for Electrical and Electronics Engineers and The American Physical Society, and a member of Phi Beta Kappa and Sigma Pi Sigma.

Honors and Awards

  • Discover Magazine (1998), R&D Magazine “R&D 100″ (1997) and Industry Week “Technology of the Year” (1997) Awards for co-invention of protonic nonvolatile field effect transistor memory (patent issued 11/3/1998).
  • 16 Outstanding/Meritorious Conference Paper Awards for IEEE Conferences on Nuclear and Space Radiation Effects along with Conferences on Hardened Electronics and Radiation Technology.
  • Distinguished Member of the Technical Staff, Sandia National Laboratories, 1990-1999.
  • Lark-Horovitz Award, Purdue University, 1984.

 

http://eecs.vanderbilt.edu/people/fleetwood/