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Jeffrey Kauppila, PhD, PE

Research Assistant Professor
ISDE Senior Research Engineer
Google Scholar Profile
Dr. Jeffrey Kauppila is a Research Assistant Professor of Electrical Engineering with Vanderbilt University’s Institute for Space and Defense Electronics (ISDE. He received his Ph.D. in Electrical Engineering (5/15), M.S. in Electrical Engineering (8/03), and his B.E. in Electrical Engineering (5/01) all from the Vanderbilt University. Jeff joined ISDE in 2003 and his research focus has centered on the development of radiation-effects-enabled compact models, integration of models with existing and custom developed process-design-kits (PDK), and the application of the radiation-enabled models in the design of radiation-hardened electronics. He is actively involved in the development and design of integrated circuits and test structures used to extract and calibrate electrical and radiation-enabled model parameters. Jeff has analog/mixed signal design experience in bipolar junction transistor, bulk CMOS, silicon-on-insulator CMOS, and FinFET technologies with minimum process feature sizes from 6um to 14nm. Dr. Kauppila is a licensed professional engineer in the state of Tennessee.
Highlighted Publications:
J. S. Kauppila, D. R. Ball, J. A. Maharrey, R. C. Harrington, T. D. Haeffner, A. L. Sternberg, M. L. Alles, and L. W. Massengill, “A Bias-Dependent Single-Event-Enabled Compact Model for Bulk FinFET Technologies,” IEEE Transactions on Nuclear Science, vol. 66, no. 3, pp. 635–642, Mar. 2019. DOI:10.1109/TNS.2019.2897329
J. S. Kauppila, J. A. Maharrey, R. C. Harrington, T. D. Haeffner, P. Nsengiyumva, D. R. Ball, A. L. Sternberg, E. X. Zhang, B. L. Bhuva, L. W. Massengill, “Exploiting Parallelism and Heterogeneity in a Radiation Effects Test Vehicle for Efficient Single-Event Characterization of Nanoscale Circuits,” IEEE Transactions on Nuclear Science, vol. 66, no. 1, pp. 486-494, Jan. 2018. DOI:10.1109/TNS.2017.2783260
K. M. Warren, J. S. Kauppila, R. A. Weller, M. H. Mendenhall, R. A. Reed, R. D. Schrimpf, A. L. Amort, M. Cabanas-Holmen, and L. W. Massengill, “Analyzing Single Event Effects with Monte Carlo Radiation Transport and Electronic Design Automation Tools,” Journal of Radiation Effects, Research, and Engineering, vol. 36, no. 1, pp. 2–21, Apr. 2018.
J. S. Kauppila, T. D. Haeffner, D. R. Ball, A. V. Kauppila, T. D. Loveless, S. Jagannathan, A. L. Sternberg, B. L. Bhuva, L.W. Massengill, “Circuit-Level Layout-Aware Single-Event Sensitive-Area Analysis of 40-nm Bulk CMOS Flip-Flops Using Compact Modeling,” IEEE Transactions on Nuclear Science, vol.58, no.6, pp.2680,2686, Dec. 2011. DOI:10.1109/TNS.2011.2172692
J.S. Kauppila, A.L. Sternberg, M.L. Alles, A.M. Francis, J. Holmes, O.A. Amusan, L.W. Massengill, “A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit,” IEEE Transactions on Nuclear Science, vol.56, no.6, pp.3152,3157, Dec. 2009 DOI:10.1109/TNS.2009.2033798