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Jeff Kauppila

Jeffrey Kauppila, Ph.D., PE is a Research Assistant Professor in the Department of Electrical Engineering and Computer Science at Vanderbilt University, and his research is performed in conjunction with the Institute for Space and Defense Electronics (ISDE), where he works in the area of radiation effects modeling and radiation hardened design for microelectronics. He received his Ph.D. in Electrical Engineering (2015), M.S. in Electrical Engineering (2003), and his B.E. in Electrical Engineering (2001) all from Vanderbilt University.  Dr. Kauppila joined ISDE in 2003 and his research focus has centered on the development of radiation-effects-enabled compact models, integration of models with existing and custom developed process-design-kits (PDK), and the application of the radiation-enabled models in the design of radiation-hardened strategic defense systems electronics. Dr. Kauppila is actively involved in the development and design of integrated circuits and test structures used to extract and calibrate electrical and radiation-enabled model parameters. Dr. Kauppila has analog/mixed signal design experience in bipolar junction transistor, bulk CMOS, silicon-on-insulator CMOS, and FinFET technologies with minimum process feature sizes from from 6um to 14nm. Dr. Kauppila has also been involved in design support activities for a DOD strategic defense system program in multiple design disciplines, including analog/mixed signal integrated circuits, control electronics modules, and power supply/converter design. Dr. Kauppila has served as a reviewer for the IEEE Transactions on Nuclear Science and the Journal of Radiation Effects Research and Engineering several times. Dr. Kauppila has multiple technical/trade publications. Dr. Kauppila is a licensed professional engineer in the state of Tennessee.

Dissertation Title:

Layout-Aware Modeling and Analysis Methodologies for Transient Radiation Effects on Integrated Circuit Electronics

Dissertation Abstract:

The design of radiation-hardened integrated circuits is increasingly simulation driven, and increased costs to fabricate designs require engineers to consider transient radiation effects in the simulation and design phase to limit fabrication and test cycles required to produce a radiation-hardened part. This work advances the historical modeling approaches with bias-dependent and layout-aware methods for modeling the dose-rate and single-event effects in advanced technologies. A novel layout-aware analysis method has been developed, utilizing a hybrid of compact models (for efficiency) and spatially-aware layout objects (for geometric charge collection accuracy), in an industry standard integrated circuit design tool flow. The layout-aware analysis provides designers with visual feedback about the sensitivity of a design directly referenced to the circuit layout. The methods developed in this research are being actively utilized in radiation-effects research at universities, aerospace and defense corporations, and commercial integrated circuit design and manufacturing organizations. This research develops capabilities that provide a path forward to model transient radiation effects in advanced integrated circuit technologies.

Publications:

J.S. Kauppila, D. R. Ball, M. L. Alles, R. D. Schrimpf, T. D. Loveless, J. A. Maharrey, R. C. Quinn, J. D. Rowe, L. W. Massengill, “Geometry-Aware Single-Event Enabled Compact Models for Sub-50nm Partially Depleted Silicon-on-Insulator Technologies,” IEEE Trans. Nucl. Sci. Special Edition on Modeling and Simulation, vol. 62, no. 4, pp. 1589-1598, Aug. 2015

T.D. Haeffner, T.D. Loveless, E.X. Zhang, A.L. Sternberg, S. Jagannathan, R.D. Schrimpf, J.S. Kauppila, M.L. Alles, D.M. Fleetwood, L.W. Massengill, N.F. Haddad, “Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process,” IEEE Trans. Nucl. Sci., vol. 61, no. 6, pp. 3037-3042, Dec. 2014

J. S. Kauppila, K. M. Warren, D. R. Ball, M. L. Alles, T. D. Haeffner, A. L. Sternberg, S. E. Armstrong, P. Cole, R. D. Schrimpf, and L. W. Massengill, “Dose Rate Enabled Compact Models for Dielectrically Isolated Integrated Circuit Processes,”Journal of Radiation Effects, Research, and Engineering; vol. 32, no. 1, pp. 29-38, Sept. 2014

J. S. Kauppila, J. D. Rowe, A. L. Sternberg, D. R. Herbison, A. F. Witulski, M. W. Mccurdy, D. Valadez, R. D. Schrimpf, and L. W. Massengill, “Radiation-Enabled Model Development for a Library of Common Active Discrete Components,”Journal of Radiation Effects, Research, and Engineering; vol. 32, no. 1, pp. 39-48, Sept. 2014

S.E. Armstrong, R.W. Blaine, J.S. Kauppila, N.M. Atkinson, A. Duncan, G. Berger, C.R. Wagner, W.T. Holman, L.W. Massengill, “Prompt-Dose Response of Single-Event Charge-Sharing-Based Mitigation in Folded-Cascode Amplifiers,” Journal of Radiation Effects, Research, and Engineering; vol. 32, no. 1, pp. 1-8, Sept. 2014

N.M. Atkinson, W.T. Holman, J.S. Kauppila, T.D. Loveless, N.C. Hooten, A.F. Witulski, B.L. Bhuva, L.W. Massengill, E. X. Zhang; J.H. Warner, “The Quad-Path Hardening Technique for Switched-Capacitor Circuits,” IEEE Trans. Nucl. Sci., vol. 60, no. 6, pp. 4356-4361, Dec. 2013

S. Jagannathan, T.D. Loveless, E.X. Zhang, D.M. Fleetwood, R.D. Schrimpf, T.D. Haeffner, J.S. Kauppila, N. Mahatme, B.L. Bhuva, M.L. Alles, W.T. Holman, A.F. Witulski, L.W. Massengill, “Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation,” IEEE Trans. Nucl. Sci., vol. 60, no. 6, pp. 4498-4504, Dec. 2013

J.A. Maharrey, R.C. Quinn, T.D. Loveless, J.S. Kauppila, S. Jagannathan, N.M. Atkinson, N.J. Gaspard, E.X. Zhang, M.L. Alles, B.L. Bhuva, W.T. Holman, L.W. Massengill, “Effect of Device Variants in 32 nm and 45 nm SOI on SET Pulse Distributions,” IEEE Trans. Nucl. Sci., vol. 60, no. 6, pp. 4399-4404, Dec. 2013

N.M. Atkinson, R.W. Blaine, J.S. Kauppila, S.E. Armstrong, T.D. Loveless, N.C. Hooten, W.T. Holman, L.W. Massengill, J.H. Warner, “RHBD Technique for Single-Event Charge Cancellation in Folded-Cascode Amplifiers,” IEEE Trans. Nucl. Sci., vol. 60, no. 4, pp.2756-2761, Aug. 2013

R.W. Blaine, N.M. Atkinson, J.S. Kauppila, S.E. Armstrong, N.C. Hooten, J.H. Warner, W.T. Holman, L.W. Massengill, “Differential Charge Cancellation (DCC) Layout as an RHBD Technique for Bulk CMOS Differential Circuit Design,” IEEE Trans. Nucl. Sci., vol. 59, no. 6, pp. 2867-2871, Dec. 2012

A.V. Kauppila, B.L. Bhuva, T.D. Loveless, S. Jagannathan, N.J. Gaspard, J.S. Kauppila, L.W. Massengill, S-J Wen, R. Wong, G.L. Vaughn, W.T. Holman, “Effect of Negative Bias Temperature Instability on the Single Event Upset Response of 40 nm Flip-Flops,” IEEE Trans. Nucl. Sci., vol.59, no.6, pp.2651,2657, Dec. 2012

B. Narasimham, K. Chandrasekharan, Z. Liu, J.K. Wang, G. Djaja, N.J. Gaspard, J.S.Kauppila, B.L. Bhuva, “A Hysteresis-Based D-Flip-Flop Design in 28 nm CMOS for Improved SER Hardness at Low Performance Overhead,”IEEE Trans. Nucl. Sci., vol. 59, no. 6, pp. 2847-2851, Dec. 2012

R.W. Blaine, N.M. Atkinson, J.S. Kauppila, T.D. Loveless, S.E. Armstrong, W.T. Holman, L.W. Massengill, “Single-Event-Hardened CMOS Operational Amplifier Design,” IEEE Trans. Nucl. Sci., vol.59, no.4, pp.803,810, Aug. 2012

T.D. Loveless, J.S. Kauppila, S. Jagannathan, D.R. Ball, J.D. Rowe, N.J. Gaspard, N.M. Atkinson, R.W. Blaine, T.R. Reece, J.R. Ahlbin, T.D. Haeffner, M.L. Alles, W.T. Holman, B.L. Bhuva, L.W. Massengill, “On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator Technology,” IEEE Trans. Nucl. Sci., vol.59, no.6, pp.2748,2755, Dec. 2012

W.G. Bennett, R.D. Schrimpf, N.C. Hooten, R.A. Reed, J.S. Kauppila, R.A. Weller, K.M. Warren, M.H. Mendenhall, “Efficient Method for Estimating the Characteristics of Radiation-Induced Current Transients,” IEEE Trans. Nucl. Sci., vol.59, no.6, pp.2704,2709, Dec. 2012

J.S. Kauppila, T.D. Haeffner, D.R. Ball, A.V. Kauppila, T.D. Loveless, S. Jagannathan, A.L. Sternberg, B.L. Bhuva, L.W. Massengill, “Circuit-Level Layout-Aware Single-Event Sensitive-Area Analysis of 40-nm Bulk CMOS Flip-Flops Using Compact Modeling,” IEEE Trans. Nucl. Sci., vol.58, no.6, pp.2680,2686, Dec. 2011

R.W. Blaine, S.E. Armstrong, J.S. Kauppila, N.M. Atkinson, B.D. Olson, W.T. Holman, L.W. Massengill, “RHBD Bias Circuits Utilizing Sensitive Node Active Charge Cancellation,” IEEE Trans. Nucl. Sci., vol.58, no.6, pp.3060,3066, Dec. 2011

A.V. Kauppila, B.L. Bhuva, J.S. Kauppila, L.W. Massengill, W.T. Holman, “Impact of Process Variations on SRAM Single Event Upsets,” IEEE Trans. Nucl. Sci., vol.58, no.3, pp.834,839, June 2011

J.S. Kauppila, A.L. Sternberg, M.L. Alles, A.M. Francis, J. Holmes, O.A. Amusan, L.W. Massengill, “A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit,” IEEE Trans. Nucl. Sci., vol.56, no.6, pp.3152,3157, Dec. 2009

A.M. Francis, D. Dimitrov, J.S. Kauppila, A. Sternberg, M. Alles, J. Holmes, H.A. Mantooth, “Significance of Strike Model in Circuit-Level Prediction of Charge Sharing Upsets,” IEEE Trans. Nucl. Sci., vol.56, no.6, pp.3109,3114, Dec. 2009

A.V. Kauppila, G.L. Vaughn, J.S. Kauppila, L.W. Massengill, “Probabilistic Evaluation of Analog Single Event Transients,” IEEE Trans. Nucl. Sci., vol.54, no.6, pp.2131,2136, Dec. 2007

A.V Kauppila, L.W. Massengill, W.T. Holman, J.S. Kauppila, “Transient Radiation Analysis of a Folded Cascode Operational Amplifier Targeted to the Intersil EBHF Bipolar Process”, Journal of Radiation Effects, Research, and Engineering, vol. 23, no. 1, p. 149, Sept. 2007

J.S. Kauppila, L.W. Massengill, W.T. Holman, A.V. Kauppila, S. Sanathanamurthy, “Single event Simulation methodology for analog/mixed signal design hardening,” IEEE Trans. Nucl. Sci., vol.51, no.6, pp. 3603- 3608, Dec. 2004

A.V. Kauppila, L.W. Massengill, W.T. Holman, G.L. Vaughn, J.S. Kauppila, “Frequency-domain analysis of analog single-event transients (ASETs) based on energy spectral density,” IEEE Trans. Nucl. Sci., vol.51, no.6, pp.3537,3545, Dec. 2004

Presentations and Proceedings:

J.S. Kauppila, “Modeling and Simulation of Radiation Effects on Electronic Circuits,” 2015 Hardened Electronics and Radiation Technology Technical Interchange Meeting, Apr. 2015

J.S. Kauppila, J.A. Maharrey, R.C. Quinn, T.D. Loveless, T.D. Haeffner, J.D. Rowe, D.R. Ball, M.L. Alles, L.W. Massengill, “Single-Event Measurements and Modeling in 32nm SOI CMOS,” Proceedings of Government Microcircuit Applications & Critical Technology Conference, March 2015

J.S. Kauppila, T. D. Loveless, R. C. Quinn, J. A. Maharrey, M. L. Alles, M. W. McCurdy, R. A. Reed, K. Lilja, B. L. Bhuva, and L. W. Massengill, “Utilizing Device Stacking for Area Efficient Hardened SOI Flip-Flop Designs,” 2014 IEEE Intl. Reliability Physics Symposium Proceedings, pp. SE.4.1-7, 2014

J. S. Kauppila, K. M. Warren, D. R. Ball, M. L. Alles, T. D. Haeffner, A. L. Sternberg, S. E. Armstrong, P. Cole, R. D. Schrimpf, and L. W. Massengill, “Dose Rate Enabled Compact Models for Dielectrically Isolated Integrated Circuit Processes (Extended Abstract),”Proceedings of the Hardened Electronics and Radiation Technology Conference, 2014

A. Duncan, G. Berger, M. Gadlage, P. Cole, M. Savage, M. Kay, J. Titus, J.D. Ingalls, C. Hedge, S.E. Armstrong, J.S. Kauppila, “Strategic Radiation Response of Analog Circuits on a Commercial Bulk 180-nm High-Voltage LDMOS Process (Extended Abstract),”Proceedings of the Hardened Electronics and Radiation Technology Conference, 2014

T. D. Loveless, J. A. Maharrey, J. S. Kauppila, R. C. Quinn, W. T. Holman, M. L. Alles, B. L. Bhuva, and L. W. Massengill, “Single-Event Transients in 45 nm and 32 nm Partially Depleted SOI Technologies,”Proceedings of Government Microcircuit Applications & Critical Technology Conference, 2014

N. Atkinson, W.T. Holman, J.S. Kauppila, T.D. Loveless, L.W. Massengill, A. Witulski, B.L. Bhuva, “Radiation Hardening Techniques for Precision Voltage References,”Proceedings of Government Microcircuit Applications & Critical Technology Conference, 2014

S. Jagannathan, T.D. Loveless, W.T. Holman, J.S. Kauppila, E. Zhang and L.W. Massengill, “Resurgence of TID Effects in High Frequency Nanoscale CMOS Circuits,”Proceedings of Government Microcircuit Applications & Critical Technology Conference, 2014

N. Gaspard, S. Jagannathan, Z. Diggins, A.V. Kauppila, T.D. Loveless, J.S.Kauppila, B.L. Bhuva, L.W. Massengill, W.T. Holman, A.S. Oates, Y. Fang, S. Wen, R. Wong, “Effect of threshold voltage implants on single-event error rates of D flip-flops in 28-nm bulk CMOS,” 2013 IEEE International Reliability Physics Symposium (IRPS), vol., no., pp.SE.7.1,SE.7.3, 14-18 April 2013

M.L. Alles, R.D. Schrimpf, R.A. Reed, L.W. Massengill, R.A. Weller, M.H. Mendenhall, D.R. Ball, K.M. Warren, T.D. Loveless, J.S. Kauppila, B.D. Sierawski, “Radiation hardness of FDSOI and FinFET technologies,” 2011 IEEE International SOI Conference, vol., no., pp.1,2, 3-6 Oct. 2011

R.W. Blaine, N.M. Atkinson, J.S. Kauppila, S.E. Armstrong, W.T. Holman, L.W. Massengill, “A single-event-hardened CMOS operational amplifier design,” 2011 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS), vol., no., pp.123,127, 19-23 Sept. 2011

J.S. Kauppila, A.L. Sternberg, M.L. Alles, T.D. Loveless, B.L. Bhuva, W.T. Holman, and L.W. Massengill, “Radiation-Enabled Compact Models for Advanced Technology Integrated Circuit Design,” Proceedings of Government Microcircuit Applications & Critical Technology Conference, 2011

J.S. Kauppila, M.L. Alles, R.D. Schrimpf, M. Gadlage, S. Armstrong, L.W. Massengill, “Addressing the Challenges for Future Radiation-Hardened Microelectronics,” 2009 American Society of Naval Engineers: Global Deterrence and Defense Symposium, Sept. 2009

P. Tuinenga, A. Witulski, J.S.Kauppila, M. McCurdy, D. Herbison, L.W. Massengill, “Nonlinear Magnetics Modeling for Magamp Power Regulation,” 2008 IEEEPower Electronics Specialists Conference, vol., no., pp.3118-3121, 15-19 June 2008

J.S.Kauppila, J. D. Rowe, M. Walsh, J. Rhan, P. W. Tuinenga, K. Biermann, “Radiation-Enabled Analog/Mixed Signal ASICs in DxSim with Eldo and Verilog-A,” Proceedings of the Mentor Graphics User2User Conference, 2006

J.S. Kauppila, K.M. Warren, D.R. Ball, L.W. Massengill, R.D. Schrimpf, J. Ruthberg, D. Brand, S. Ditullio, S. van Dyk, “Development of a Radiation-Enabled Process Design Kit for an SOI CMOS Technology,” Proceedings of the 2004 AIAA Missile Sciences Conference

Book Publications:

J.S. Kauppila, “Best Practices for Modeling Radiation Effects in Mixed Signal Circuits,” Chapter 37, Extreme Environment Electronics, ed. J.D. Cressler and H.A. Mantooth, CRC Press, Nov. 2012

Publications and Presentations in Progress:

J.S. Kauppila, “Single-Event Modeling for Rad-Hard by Design Flows,” 2016 IEEE Nuclear and Space Radiation Effects Conference Short Course Presentation, July 2016

J.S. Kauppila, W.H. Kay, T.D. Haeffner, D.L. Rauch, T.R. Assis, N.N. Mahatme, N.J. Gaspard, B.L. Bhuva, M.L. Alles, W.T. Holman, L.W. Massengill, “Single-Event Upset Characterization Across Temperature and Supply Voltage for a 20nm Bulk Planar CMOS Technology,” IEEE Trans. Nucl. Sci., no. 6, Dec. 2015 – In Review

C.N. Arutt, K.M. Warren, R.D. Schrimpf, R.A. Weller, J.S. Kauppila, J.D. Rowe, A.L. Sternberg, R.A. Reed, D.R. Ball, D.M. Fleetwood, “Protons as a Screen for Displacement-Damage Sensitivity in Bipolar Junction Transistors,” IEEE Trans. Nucl. Sci., no. 6, Dec. 2015 – In Review

T.R. Assis, K. Ni, J.S. Kauppila, B.L. Bhuva, R.D. Schrimpf, L.W. Massengill, S. Wen, R. Wong, C. Slayman, “Estimation of Single-Event Induced Collected Charge for Multiple Transistors Using Analytical Expressions,” IEEE Trans. Nucl. Sci., no. 6, Dec. 2015 – In Review

P. Nsengiyumva, N. Tam, M.W. McCurdy, A.L. Sternberg, J.S. Kauppila, D.R. Ball, W.T. Holman, B.L. Bhuva, L.W. Massengill, “A Comparison of the SEU Response of Planar and FinFET D Flip-Flops at Advanced Technology Nodes,” IEEE Trans. Nucl. Sci., no. 6, Dec. 2015 – In Review

R.C. Quinn, J.S. Kauppila, T.D. Loveless, J.A. Maharrey, J.D. Rowe, M.L. Alles, B.L. Bhuva, R.A. Reed, M. Bounasser, K. Lilja, L.W. Massengill, “Frequency Trends Observed in 32nm SOI Flip-Flops and Combinational Logic,” IEEE Trans. Nucl. Sci., no. 6, Dec. 2015 – In Review

K.J. Shetler, N.A. Atkinson, W.T. Holman, J.S. Kauppila, T.D. Loveless, A.F. Witulski, B.L. Bhuva, E.X. Zhang, L.W. Massengill, “Radiation Hardening of Voltage References Using Chopper Stabilization,” IEEE Trans. Nucl. Sci., no. 6, Dec. 2015 – In Review

J.A. Maharrey, J.S. Kauppila, R.C. Quinn, T.D. Loveless, E.X. Zhang, W.T. Holman, B.L. Bhuva, L.W. Massengill, “Heavy-Ion Induced SETs in 32nm SOI Inverter Chains,” 2015 Proceedings of the NSREC Radiation Effects Data Workshop, 2015 – Accepted for Publication

R.C. Quinn, J.S. Kauppila, T.D. Loveless, J.A. Maharrey, J.D. Rowe, M.W. McCurdy, E.X. Zhang, M.L. Alles, B.L. Bhuva, R.A. Reed, W.T. Holman, M. Bounasser, K. Lilja, L.W. Massengill, “Heavy Ion SEU Test Data for 32nm SOI Flip-Flops,” 2015 Proceedings of the NSREC Radiation Effects Data Workshop, 2015 – Accepted for Publication

A. Duncan, G. Berger, M. Gadlage, P. Cole, M. Savage, M. Kay, J. Titus, J.D. Ingalls, C. Hedge, S.E. Armstrong, J.S. Kauppila, “Strategic Radiation Response of Analog Circuits on a Commercial Bulk 180-nm High-Voltage LDMOS Process,”Journal of Radiation Effects, Research, and Engineering, Spring 2015 – In Review

S. Jagannathan, T.D. Loveless, E.X. Zhang, D.M. Fleetwood, R.D. Schrimpf, T.D. Haeffner, J.S. Kauppila, N. Mahatme, B.L. Bhuva, M.L. Alles, W.T. Holman, A.F. Witulski, L.W. Massengill, “Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation,” IEEE Trans. Nucl. Sci. – In Review