Home » Multi-disciplinary University Research Initiative (MURI) 2006

Multi-disciplinary University Research Initiative (MURI) 2006

Vanderbilt’s Multi-disciplinary University Research Initiative (MURI) grant was in the area of Radiation Effects on Emerging Electronic Materials and Devices and was active from 2005 to 2010. This program was managed by Kitt Reinhardt of the Air Force Office of Scientific Research. Participating universities included Vanderbilt University, Arizona State University, the University of Florida, Georgia Tech, North Carolina State University, and Rutgers University. The research program focuses on using experiments and advanced simulation methods to understand the effects of radiation on new microelectronic technologies.


2006 MURI Presentations (Kick-Off Meeting, June 13th & 14th, Vanderbilt University)

Welcoming Remarks (Kitt Reinhardt, AFOSR, 804 KB)

MURI Overview (Ron Schrimpf, Vanderbilt, 2.33 MB)

Overview: Atomic-Scale Theory of Radiation-Induced Phenomena  (Sok Pantelides, Vanderbilt, 32.1 MB)

Elemental Defect Processes in Radiation-Induced Displacement Damage in Si  (Matt Beck, Vanderbilt, 862 KB)

Common Origin for Enhanced Low-Dose-Rate Sensitivity and Bias Temperature Instability Under Negative Bias   (Leonidas Tsetseris, Vanderbilt, 539 KB)

Overview: Radiation Effects in Emerging Materials  (Len Feldman, Vanderbilt, 6.54 MB)

Radiation Damage in SiO2/SiC Interfaces  (Sriram Dixit, Vanderbilt University, 1.18 MB)

Spectroscopic Identification of Defects in Alternative Dielectrics  (Gerry Lucovsky, North Carolina State University, 6.47 MB)

Radiation Effects in Advanced Gate Stack  (Eric Garfunkel, Rutgers University, Gennadi Bersuker, Sematech, 6.14 MB)

Electrical Evaluation of Electron Traps in Hf-based Gate Stacks   (Gennadi Bersuker, Sematech, 2 MB)

Effects of Device Aging on Radiation Response and Reliability  (Dan Fleetwood, Vanderbilt University, 782 KB)

Effects of Switched-Bias Annealing on Charge Trapping in HfO2 Gate Dielectrics  (Xing Zhou, Vanderbilt University, 0.98 MB)

Total-Dose Effects on Ge-Substrate MOS Devices   (Dakai Chen, Vanderbilt, 909 KB)

Radiation Effects in SiGe Devices   (John Cressler, Georgia Tech, 9.58 MB)

Radiation Challenges in Strained Si Technologies   (Yongke Sun and Scott Thompson, University of Florida, 18.3 MB)

Total Ionizing Dose Effects in Bulk Technologies and Devices  (Hugh Barnaby, Arizona State University, 2.65 MB)

Single-Event Effects in SiGe Technologies  (Robert Reed, Vanderbilt, 2.61 MB)

Overview: Physically-Based Simulation of Single-Event Effects   (Robert Weller, Vanderbilt, 3.81 KB)

Device Simulation for Single-Event Effects  (Mark Law, University of Florida, 2.0 MB)

Substrate Engineering and Charge Collection in Deep Trench Isolated Devices (Jonathan Pellish, Vanderbilt, 3.10 MB)

Multiple-Bit Upset in 130-nm CMOS Technology   (Alan Tipton, Vanderbilt University, 2.86 MB)