The Kick-Off Meeting was held at Vanderbilt University, July 22-23, 1999
This page is updated as authors provide us with their presentation(s).July 22

8:30		Welcoming Remarks and Meeting Logistics Ron Schrimpf (e-mail, www), Vanderbilt University
8:45		MURI Overview Jerry Witt, AFOSR
8:55		Radiation-Effects Needs – DoD Perspective Lew Cohn (e-mail), DTRA
9:15		Radiation-Effects Needs – Industry Perspective Bill Heidergott, Motorola
9:35		MURI Organization and Tasks Ron Schrimpf (e-mail, www), Vanderbilt University
9:50		Total-Dose Effects: Physical Modeling, Simulation and Measurement Ron Schrimpf (e-mail, www), Vanderbilt University
10:30		Break
10:50		Single-Event Dielectric Rupture Lloyd Massengill (e-mail, www), Vanderbilt University
11:30		Electrical Measurement of Radiation-Induced Defects Ken Galloway, Vanderbilt University
12:00		Lunch
1:00		Laboratory Tours
1:45		Atomic-scale Modeling of Radiation-Induced Defects Sokrates Pantelides, Vanderbilt University
2:25		Probing the Si/SiO2 Interface using Nonlinear Optical Methods Norm Tolk (e-mail), Vanderbilt University
3:05		Break
3:25		Application of Atomic-Resolution Z-Contrast STM to Radiation-Induced Defects Steve Pennycook, Vanderbilt University and ORNL
4:05		Application of Cathodoluminescence Spectroscopy to Radiation-Induced Defects Len Brillson (e-mail, www), Ohio State University
4:45		Discussion
6:30		Dinner, Blackstone Restaurant & Brewery

July 23

 

8:30		Radiation-Induced Displacement Damage and DLTS Eicke Weber, University of California, Berkeley
9:10		Proton-Irradiation Effects in Protonic Devices Mark Neifeld, University of Arizona (presented by Sungchul Lee)
9:50		Break
10:10		Advanced Dielectric Films for Aggressively Scaled CMOS Devices Gerry Lucovsky, North Carolina State University
10:50		GaN and GaAs-on-Insulator Devices Umesh Mishra, University of California, Santa Barbara
11:30		Feedback from Attendees
12:00		Meeting Ends