The Annual Meeting was held at Vanderbilt University, August 7-8, 2003PowerPoint version of the talks are downloadable.August 7

8:00		Registration and Continental Breakfast – Room 106
8:30		Welcoming Remarks – Room 134 Jerry Witt (email), AFOSR
8:40		Vanderbilt Welcome Ken Galloway (email), Vanderbilt University
8:50		MURI Overview Ron Schrimpf (email), Vanderbilt University
9:15		Quantum Transport in Nano-MOSFETs Sokrates Pantelides (email), Vanderbilt University
9:45		Effects of Electric Field on Radiation-Induced Dopant Deactivation by Hydrogen Sergey Rashkeev (email), Vanderbilt University
10:15		Break – Room 106
10:45		Identification of Radiation-Induced Defects in SiO2 Tamas Bakos (email), Vanderbilt University
11:05		Modeling the Total-Dose Response of MOS Devices Based on Atomic-Scale Calculations Chris Nicklaw (email), Vanderbilt University
11:25		Physical Origin of Border Traps Dan Fleetwood (email), Vanderbilt University
11:45		Lunch – Room 106
12:45		Total-Dose Effects in Alternative Dielectric Films Jim Felix (email), Vanderbilt University
1:15		Radiation Effects in Ultrathin SOI MOSFETs Ron Schrimpf (email), Vanderbilt University
1:45		Radiation Effects on Pseudo-MOS SOI Transistors Bongim Jun (email), Vanderbilt University
2:05		Break – Room 106
2:35		Low Frequency Noise and Radiation Response of Buried Oxides in SOI nMOS Transistors Hao Xiong (email), Vanderbilt University
2:55		Electrical and Spectral Properties of AlGaN/GaN HEMT Structures vs. 1.8 MeV Proton Irradiation Len Brillson (email), Ohio State University
3:25		Proton-Irradiation Effects on AlGaN/AlN/GaN High Electron Mobility Transistors Aditya Karmarkar (email), Vanderbilt University
3:45		Dielectric-free AlGaN/GaN HEMTs for Rad-Hard Electronics Umesh Mishra (email), University of California, Santa Barbara
4:15		Discussion
6:30		Dinner – Amerigo’s, 1920 West End Avenue, Nashville, TN

August 8

8:00		Registration and Continental Breakfast – Room 106
8:30		Intrinsic Limitations for High-k Dielectrics and Their Interfaces with Silicon Gerry Lucovsky (email), North Carolina State University
9:00		Characterization of Radiation Damage in Oxides Using Second Harmonic Generation Norm Tolk (email), Vanderbilt University
9:30		Break – Room 106
10:00		Defects related to N-sublattice damage in electron irradiated GaN Eicke Weber (email), University of California, Berkeley
10:30		Evaluating Average and Atypical Response in Radiation Effects Simulations Andrew Sternberg (email), Vanderbilt University
11:00		Feedback from Attendees
11:30		Meeting Ends