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MURI 2002 Agenda

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The Annual Meeting was held at Vanderbilt University, August, 20-21, 2002PDF version of the talks are available (PDF link).
PowerPoint version of the talks are also posted (PPT link).
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This page will be updated as authors provide us with their presentation(s).August 20

8:30 Welcoming Remarks
Jerry Witt (e-mail), AFSOR
8:40 Vanderbilt Welcome
Ken Galloway (e-mail), Vanderbilt University
8:50 Muri Overview
Ron Schrimpf (e-mailwww), Vanderbilt University
9:15 Atomic-Scale Modeling of Radiation-Induced Defects
Sokrates Pantelides (e-mail), Vanderbilt University
9:45 Physical Model for Enhanced Interface-Trap Formation at Low Dose Rates
Sergey Rashkeev (e-mail), Vanderbilt university
10:15 Break
10:45 Integration of Atomic-Scale Radiation-Effects Models with Technology Computer-Aided Design (TCAD) Tools
Ron Schrimpf (e-mailwww), Vanderbilt university
11:15 Microstructures and Energetics of Oxygen Vacancies in Amorphous SiO2
Chris Nicklaw, Vanderbilt University/DRC
11:450 Lunch
12:45 Unified Model of Hole Trapping, 1/f Noise, and Thermally Stimulated Current in MOS Devices
Dan Fleetwood (e-mail), Vanderbilt University
1:15 Long-Term Reliability Degradation of Ultra-Thin Dielectric Films due to Heavy-Ion Irradiation
Lloyd Massengill (e-mail), Vanderbilt University
1:45 Total-Dose Effects in Alternate Dielectric Films
Jim Felix (e-mail), Vanderbilt University
2:15 Break
2:45 Characterization of Proton Irradiated AlGaN/GaN Field-Effect Transistor Structures by Nanoscale Depth-Resolved Spectroscopy
Len Brillson (e-mailwww), Ohio State University
3:30 Characterization of X-Ray Radiation Damage in Gate and Isolation Oxides Using Second Harmonic Generation
Norm Tolk (e-mail), Vanderbilt University
4:00 1.8 MeV Proton Damage Effects on the Threshole Current and Operating Wavelength of Vertical Cavity Surface Emitting Lasers
Aditya Kalavagunta , University of Arizona
4:35 Discussion
6:30 Dinner

August 21

8:30 Electronic Structure of Transition Metal Oxides, and Silicate and Aluminate Alloys
Gerry Lucovsky (e-mail), North Carolina State University
9:15 Luminescence, DLTS and Noise Spectroscopies of Radiation Damage in GaN and GOI MESFETs
Eicke Weber (e-mailwww), University of California, Berkeley
10:00 Break
10:20 Status of AlGaN/GaN HEMTs and GOI Devices for Space Applications
Umesh Mishra (e-mail), University of California, Santa Barbara
11:05 Proton-Irradiation Effects on GaAs/AlGaAs HBTs and GaN and GOI FETs
Bo Choi (e-mail), Vanderbilt University
11:25 Feedback from Attendees
12:00 Meeting Ends