The Annual Meeting was held at Vanderbilt University, October 10-11, 2000PDF version of the talks are available (PDF link).
PowerPoint version of the talks are also posted (PPT link).
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This page will be updated as authors provide us with their presentation(s).

October 10

8:30		Welcoming Remarks Jerry Witt (e-mail), AFSOR
8:40		Vanderbilt Welcome Ken Galloway (e-mail), Vanderbilt University
8:50		Muri Overview Ron Schrimpf (e-mail, www), Vanderbilt University	[PDF | PPT]
9:10		Total-Dose Effects: Physical modeling, Simulation, and Measurement Ron Schrimpf (e-mail, www), Vanderbilt University	[PDF | PPT]
9:30		Atomic-Scale Modeling of Radiation-Induced Defects Sokrates Pantelides (e-mail), Vanderbilt university	[PDF | PPT]
9:50		Reactions of Mobile Hydrogen with Si-SiO2 Interface Sergey Rashkeev (e-mail), Vanderbilt university	[PDF | PPT]
10:10		Hydrogen-Related Defects in Irradiated SiO2 Paul Bunson (e-mail), Grinnell College	[PDF | PPT]
10:30		Break
10:50		Electrical Breakdown of Irradiated Oxides During Current-Temperature Stress Dan Fleetwood (e-mail, www), Vanderbilt University	[PDF | PPT]
11:10		Plans for Single-Event Dielectric Rupture Experiments Lloyd Massengill (e-mail, www), Vanderbilt University	[PDF | PPT]
11:30		Total Dose Effects in Composite Nitride-Oxide Films Ajay Raparla (e-mail), Vanderbilt University	[PDF | PPT]
11:50		Lunch
12:45		Laboratory Tours
2:00		Characterization of X-Ray Radiation Damage in Gate and Isolation Oxides Using Second Harmonic Generation Norm Tolk (e-mail), Vanderbilt University	[PDF | PPT]
2:40		Low Energy Electron-Excited Nanoscale Luminescence Detection of Trap Activation by Ionizing Radiation Len Brillson (e-mail, www), Ohio State University	[PDF | DOC]
3:20		Break
3:40		Radiation Effects in GaN and GaAs-on-Insulator Devices Eicke Weber (e-mail, www), University of California, Berkeley	[PDF | PPT]
4:00		Fast Proton Damage in Bulk Silicon Henning Feick (e-mail, www), University of California, Berkeley	[PDF | PPT]
4:20		Discussion
6:30		Dinner, Big River Restaurant & Brewery (Transportation available at 6:00 pm at Sarratt)

October 11

8:30		Application of Atomic-Resolution Z-Contrast STM to Radiation-Induced Defects Steve Pennycook (e-mail), Vanderbilt University and ORNL	[PDF | PPT]
9:00		Modeling Proton-Irradiation Effects in Photonic Devices Mark Neifeld (e-mail), University of Arizona	[PDF | PPT]
9:40		Break
10:10		The Transition from Thermally-Grown SiO2 to Deposited Thin Film Alternative Gate Dielectrics for Advanced CMOS Devices Gerry Lucovsky (e-mail), North Carolina State University	[PDF | PPT]
10:50		Status of AlGaN/GaN HEMTs and GOI Devices for Space Applications and Testing Strategy Umesh Mishra (e-mail), University of California, Santa Barbara	[PDF | PPT]
11:30		Feedback from Attendees
12:00		Meeting Ends