The Annual Meeting was held at Vanderbilt University, November 14-15, 2001PDF version of the talks are available (PDF link).
PowerPoint version of the talks are also posted (PPT link).
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November 14

8:30		Welcoming Remarks Jerry Witt (e-mail), AFSOR
8:40		Vanderbilt Welcome Ken Galloway (e-mail), Vanderbilt University
8:50		Muri Overview Ron Schrimpf (e-mail, www), Vanderbilt University	[PDF | PPT]
9:10		Atomic-Scale Modeling of Radiation-Induced Defects Sokrates Pantelides (e-mail), Vanderbilt University	[PDF | PPT]
9:35		Defect Generation by Mobile Hydrogen at the Si-SiO2Interface Sergey Rashkeev (e-mail), Vanderbilt university	[PDF | PPT]
10:00		Total-Dose Effects: Relating Atomic-Scale Models to Device Degradation Ron Schrimpf (e-mail, www), Vanderbilt university	[PDF | PPT]
10:25		Break
10:45		Quantum Simulations to Circuit-Level Analysis Chris Nicklaw, Vanderbilt University/DRC	[PDF | PPT]
11:10		Single-Event Dielectric Rupture in Advanced Gate Dielectrics Lloyd Massengill (e-mail), Vanderbilt University	[PDF | PPT]
11:35		Electronic Structure of Transition Metal Oxides, and Silicate and Aluminate Alloys Gerry Lucovsky (e-mail), North Carolina State University	[PDF | PPT]
12:20		Lunch
1:20		Aging and Baking Effects on the Radiation Hardness of MOS Capacitors Dan Fleetwood (e-mail), Vanderbilt University	[PDF | PPT]
1:45		Application of Atomic-Resolution Z-Contrast STEM to Radiation-induced Defects Steve Pennycook (e-mail), Vanderbilt University and ORNL	[PDF | PPT]
2:10		Detection of Irradiation-Induced trap Activation in MOS Structures by Spatially Localized Cathodoluminescence Spectroscopy Len Brillson (e-mail, www), Ohio State University	[PDF | PPT]
2:55		Break
3:20		Characterization of X-Ray Radiation Damage in Gate and Isolation Oxides Using Second Harmonic Generation Norm Tolk (e-mail), Vanderbilt University	[PDF | PPT]
3:50		Status of AlGaN/GaN HEMTs and GOI Devices for Space Applications Umesh Mishra (e-mail), University of California, Santa Barbara
4:35		Discussion
6:30		Dinner, Blackstone’s Restaurant

November 15

8:30		Modeling Proton-Irradiation Effects in Photonic Devices Mark Neifeld (e-mail), University of Arizona	[PDF | PPT]
9:15		Proton Damage Effects in GaN, GaAs, and GaAs-on-Insulator Devices Eicke Weber (e-mail, www), University of California, Berkeley	[PDF | PPT]
9:50		Break
10:10		Silicon Bulk and High-k dielectric Ionization Damage Henning Feick (e-mail, www), University of California, Berkeley	[PDF | PPT]
10:25		Proton-Irradiation Effects on GaAs/AlGaAs HBTs and GaN GOI FETs Bo Choi (e-mail), Vanderbilt University	[PDF | PPT]
10:45		Total Dose Effects in Composite Nitride-Oxide Films Ajay Raparla (e-mail), Vanderbilt University	[PDF | PPT]
11:30		Feedback from Attendees
12:00		Meeting Ends