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MURI 2001 Agenda

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The Annual Meeting was held at Vanderbilt University, November 14-15, 2001PDF version of the talks are available (PDF link).
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This page will be updated as authors provide us with their presentation(s).

November 14

8:30 Welcoming Remarks
Jerry Witt (e-mail), AFSOR
8:40 Vanderbilt Welcome
Ken Galloway (e-mail), Vanderbilt University
8:50 Muri Overview
Ron Schrimpf (e-mailwww), Vanderbilt University
9:10 Atomic-Scale Modeling of Radiation-Induced Defects
Sokrates Pantelides (e-mail), Vanderbilt University
9:35 Defect Generation by Mobile Hydrogen at the Si-SiO2Interface
Sergey Rashkeev (e-mail), Vanderbilt university
10:00 Total-Dose Effects: Relating Atomic-Scale Models to Device Degradation
Ron Schrimpf (e-mailwww), Vanderbilt university
10:25 Break
10:45 Quantum Simulations to Circuit-Level Analysis
Chris Nicklaw, Vanderbilt University/DRC
11:10 Single-Event Dielectric Rupture in Advanced Gate Dielectrics
Lloyd Massengill (e-mail), Vanderbilt University
11:35 Electronic Structure of Transition Metal Oxides, and Silicate and Aluminate Alloys
Gerry Lucovsky (e-mail), North Carolina State University
12:20 Lunch
1:20 Aging and Baking Effects on the Radiation Hardness of MOS Capacitors
Dan Fleetwood (e-mail), Vanderbilt University
1:45 Application of Atomic-Resolution Z-Contrast STEM to Radiation-induced Defects
Steve Pennycook (e-mail), Vanderbilt University and ORNL
2:10 Detection of Irradiation-Induced trap Activation in MOS Structures by Spatially Localized Cathodoluminescence Spectroscopy
Len Brillson (e-mailwww), Ohio State University
2:55 Break
3:20 Characterization of X-Ray Radiation Damage in Gate and Isolation Oxides Using Second Harmonic Generation
Norm Tolk (e-mail), Vanderbilt University
3:50 Status of AlGaN/GaN HEMTs and GOI Devices for Space Applications
Umesh Mishra (e-mail), University of California, Santa Barbara
4:35 Discussion
6:30 Dinner, Blackstone’s Restaurant

November 15

8:30 Modeling Proton-Irradiation Effects in Photonic Devices
Mark Neifeld (e-mail), University of Arizona
9:15 Proton Damage Effects in GaN, GaAs, and GaAs-on-Insulator Devices
Eicke Weber (e-mailwww), University of California, Berkeley
9:50 Break
10:10 Silicon Bulk and High-k dielectric Ionization Damage
Henning Feick (e-mailwww), University of California, Berkeley
10:25 Proton-Irradiation Effects on GaAs/AlGaAs HBTs and GaN GOI FETs
Bo Choi (e-mail), Vanderbilt University
10:45 Total Dose Effects in Composite Nitride-Oxide Films
Ajay Raparla (e-mail), Vanderbilt University
11:30 Feedback from Attendees
12:00 Meeting Ends