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Multi-disciplinary University Research Initiative (MURI) 2009

Vanderbilt’s Multi-disciplinary University Research Initiative (MURI) grant was in the area of Radiation Effects on Emerging Electronic Materials and Devices and was active from 2005 to 2010. This program was managed by Kitt Reinhardt of the Air Force Office of Scientific Research. Participating universities included Vanderbilt University, Arizona State University, the University of Florida, Georgia Tech, North Carolina State University, and Rutgers University. The research program focuses on using experiments and advanced simulation methods to understand the effects of radiation on new microelectronic technologies.


2009 MURI Presentations (Review Meeting, June 10th & 11th, Vanderbilt University) Listed in Order of Presenter

MURI Overview  (Ron Schrimpf, Vanderbilt University – 6.2M)

Overview: Atomic-Scale Tehory of Radiation-Induced Phenomena   (Sokrates Pantelides, Vanderbilt University – 6 MB)

Multi-disciplinary University Research Initiative (MURI) 2009  (Matt Beck, Vanderbilt University – 3.4 MB)

Ion-induced Leakage Currents II: Quantum Transport   (Nikolai Sergueev, Vanderbilt University – 5.6 MB)

Ion-induced Leakage Currents III: A Percolation Model   (Yevgeniy Puzyrev, Vanderbilt University – 2.3 MB)

H2 in Oxide: Implications for Radiation Response   (Blair Tuttle, Vanderbilt University – 1 MB)

Effect of Ambient Hydrogen on Radiation-Induced Interface-Trap Formation  (David Hughart, Vanderbilt University & Jie Chen, Arizona State University – 2.8 MB)

Effects of Moisture on l/f Noise and Radiation Respons in MOS Devices   (Ashley Francis, Vanderbilt University – 928 KB)

Reliability and Total Dose Effects in Ge MOS Devices   (Rajan Arora, Vanderbilt University – 4.1 MB)

Charge Trapping Properties of 3C and 4H SiC MOS Capacitors (John Rozen and Rajan Arora, Vanderbilt University – 3.6 MB)

Overview: Radiation Effects in Emerging Materials  (Len Feldman, Rutgers University – 3.7 MB)

Defects in Non-Crystalline and Nano-Crystalline Alternative Transition Metal Dielectrics   (Gerry Lucovsky, North Carolina State University – 9.4 MB)

Radiation Effects in Advanced Gate Stacks   (Eric Garfunkel, Rutgers University & Gennadi Bersuker, Sematech – 2.7 MB)

Total Dose and Single Event Effects in Strained Si Technologies   (Scott Thompson, University of Florida – 3.6 MB)

Simulating Hydrogen Transport and Single-Event Transients   (Mark Law, University of Florida – 2.9 MB)

Overview: Monte Carlo Radiative Energy Deposition (MRED) Code (Bob Weller, Vanderbilt University – 5.5 MB)

SEE Rate Prediction Based on an Integrated Monte Carlo/SPICE Simulation Methodology  (Kevin Warren, Institute for Space and Defense Electronics, Vanderbilt University – 5.7 MB)

Low-Energy Proton Single Event Effects  (Brian Sierawski, Institute for Space and Defense Electronics, Vanderbilt University – 1.2 MB)

Single-Event Transient Pulse-Width Measurements in Advanced Technologies  (Matt Gadlage, Vanderbilt University – 5.3 MB)

Radiation Effects in SiGe Devices  (John Cressler, Georgia Tech – 17.6 MB)

High-Speed Single-Event Current Transient Measurements in SiGe HBTs (Jonny Pellish, NASA GSFC and Robert Reed, Vanderbilt University – 3.2 MB)

Modeling Total Ionizing Dose Effects in Deep Submicron Bulk CMOS Technologies  (Hugh Barnaby, Arizona State University – 3.3 MB)

Effects of STI Topology on Radiation-Induced Leakage   (Nadia Rezzak, Vanderbilt University and Mike Alles, Institute for Space and Defense Electronics – 8.7 MB)

Modeling the Dose Rate Response and the Effect of Hydrogen in Bipolar Technologies  (Jie Chen, Arizona State University – 1.6 MB)

Total-Dose Effects in 100-nm FinFETS  (Farah El-Mamouni, Vanderbilt University – 2.2 MB)

Radiation Effects on ZRAMs (Exnia Zhang, Vanderbilt University – 1 MB)