D. Caudel, M. McCurdy, D. M. Fleetwood, R. A. Reed, R. A. Weller, B. Goodwin, E. Rowe, V. Buliga, M. Groza, K. Stassun, and A. Burger, “Radiation damage of strontium iodide crystals due to irradiation by Cs-137 gamma rays: A novel approach to altering nonproportionality,” Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment, vol. 835, pp. 177-181, Nov 1 2016.

J. Chen, Y. S. Puzyrev, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, A. R. Arehart, S. A. Ringel, S. W. Kaun, E. C. H. Kyle, J. S. Speck, P. Saunier, C. Lee, and S. T. Pantelides, “High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs,” IEEE Transactions on Device and Materials Reliability, vol. 16, pp. 282-289, Sep 2016.

G. Gaur, D. S. Koktysh, D. M. Fleetwood, R. A. Weller, R. A. Reed, B. R. Rogers, and S. M. Weiss, “Influence of Ionizing Radiation and the Role of Thiol Ligands on the Reversible Photodarkening of CdTe/CdS Quantum Dots,” Acs Applied Materials & Interfaces, vol. 8, pp. 7869-7876, Mar 30 2016.

A. Javanainen, K. F. Galloway, V. Ferlet-Cavrois, J. M. Lauenstein, F. Pintacuda, R. D. Schrimpf, R. A. Reed, and A. Virtanen, “Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes,” Ieee Transactions on Device and Materials Reliability, vol. 16, pp. 208-212, Jun 2016.

R. Jiang, X. Shen, J. Chen, G. X. Duan, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, J. S. Speck, and S. T. Pantelides, “Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors,” Applied Physics Letters, vol. 109, Jul 11 2016.

B. T. Kiddie and W. H. Robinson, “Relative logic cell placement for mitigation of charge sharing-induced transients,” Semiconductor Science and Technology, vol. 31, Oct 2016.

S. Mukherjee, Y. Puzyrev, J. Chen, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Hot-Carrier Degradation in GaN HEMTs Due to Substitutional Iron and Its Complexes,” Ieee Transactions on Electron Devices, vol. 63, pp. 1486-1494, Apr 2016.

K. Ni, G. Eneman, E. Simoen, A. Mocuta, N. Collaert, A. Thean, R. D. Schrimpf, R. A. Reed, and D. Fleetwood, “Electrical Effects of a Single Extended Defect in MOSFETs,” Ieee Transactions on Electron Devices, vol. 63, pp. 3069-3075, Aug 2016.

P. Nsengiyumva, D. R. Ball, J. S. Kauppila, N. Tam, M. McCurdy, W. T. Holman, M. L. Alles, B. L. Bhuva, and L. W. Massengill, “A Comparison of the SEU Response of Planar and FinFET D Flip-Flops at Advanced Technology Nodes,” Ieee Transactions on Nuclear Science, vol. 63, pp. 266-272, Feb 2016.

T. Reece and W. H. Robinson, “Detection of Hardware Trojans in Third-Party Intellectual Property Using Untrusted Modules,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 35, pp. 357-366, Mar 2016.

D. K. Sinha, A. Chatterjee, and R. D. Schrimpf, “Modeling Erratic Behavior Due to High Current Filamentation in Bipolar Structures Under Dynamic Avalanche Conditions,” Ieee Transactions on Electron Devices, vol. 63, pp. 3185-3192, Aug 2016.

G. C. Wang, L. H. Bao, T. F. Pei, R. S. Ma, Y. Y. Zhang, L. L. Sun, G. Y. Zhang, H. F. Yang, J. J. Li, C. Z. Gu, S. X. Du, S. T. Pantelides, R. D. Schrimpf, and H. J. Gao, “Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices,” Nano Letters, vol. 16, pp. 6870-6878, Nov 2016.

H. B. Wang, N. Mahatme, L. Chen, M. Newton, Y. Q. Li, R. Liu, M. Chen, B. L. Bhuva, K. Lilja, S. J. Wen, R. Wong, R. Fung, and S. Baeg, “Single-Event Transient Sensitivity Evaluation of Clock Networks at 28-nm CMOS Technology,” Ieee Transactions on Nuclear Science, vol. 63, pp. 385-391, Feb 2016.

Z. Zhang, D. Cardwell, A. Sasikumar, E. C. H. Kyle, J. Chen, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, J. S. Speck, A. R. Arehart, and S. A. Ringel, “Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures,” Journal of Applied Physics, vol. 119, Apr 28 2016.